Influence of the pulling rate on the properties of ZnGeP2 crystal grown by vertical Bridgman method

Shen, Liang; Wu, Dong

doi:10.1016/j.jcrysgro.2016.04.025

Cited by 6 publications

(1 citation statement)

References 34 publications

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“…On the topographs obtained, we see polygonization has been accomplished, but do not observe the process of lowangle boundary formation by way of dislocation rearrangement from the slip bands. However, micrographs of etch pits, given by Shen & Wu (2016), appear to show the initial stage of such a rearrangement process.…”

Section: Dislocations With Lines Parallel To the [001] Axis Topograpmentioning

confidence: 99%

Low-angle boundaries in ZnGeP₂single crystals

et al. 2018

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The structure of low-angle boundaries in ZnGeP 2 crystals grown by the vertical Bridgman technique was studied using Borrmann X-ray topography. The slip systems of the dislocations in the boundaries were identified by studying the contrast rosettes generated by the Borrmann effect, in the region near the dislocation core. It was shown that the boundaries are of two types: type I consists of edge dislocations of the {110}h110i slip system, and type II of edge and mixed dislocations of the {010}h100i slip system. The boundaries of both types, consisting of pure edge dislocations with lines along [001], are symmetrical tilt boundaries with [001] rotation axes. The misorientations generated by the boundaries were estimated to range between 2-20 and 1-40 00 , respectively. Lowangle boundaries are thought to be formed by polygonization of dislocations, caused by thermoelastic stresses.

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Section: Dislocations With Lines Parallel To the [001] Axis Topograpmentioning

confidence: 99%