Dotierung von ZnSiP₂ durch Diffusion

Abstract

Diffusion experiments with gallium, indium, aluminium, tin, chromium, gold, lead and tellurium in the ternary semiconductor ZnSiP, were carried out. With elements of the third group of the periodic law it was obtained an unambiguous doping effect demonstrated by temperature dependence of the Hall coefficient and by investigations with the electron microprobe. Diffusion of gallium, aluminium and indium caused the formation of shallow donors in ZnSiP, with activation energies (at vanished impurity concentration) of 30 meV, 65 meV, 70 meV, respectively. From semi-insulating p-ZnSiP, often prepared by crystal growth low resistivity n-ZnSiP, was made by diffusion with gallium and indium.