Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

Chang, Che Chia; Liu, Po–Tsun; Chien, Chen Yu; Yang, Fan

doi:10.1063/1.5020583

Cited by 34 publications

(20 citation statements)

References 29 publications

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“…The 1T1R system based on such oxide semiconductors can hardly operate the memristor due to its insufficient driving current. [23,43] The IZO TFT shows high enough I D of 0.1 to 10 mA at V D of 1 V depending on V G ranging from À5 to 10 V, which is sufficiently high to program the resistance of the HfO 2 memristor. Furthermore, the IZO TFT shows a low subthreshold gate swing, an enhancement mode threshold voltage (V th ), and a low off-current (I OFF ) of 0.15 V dec À1 , 0.8 V, and %10 À13 A, respectively.…”

Section: Structural and Electrical Properties Of The 1t1r Pixelmentioning

confidence: 99%

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

Lee

Baek

Lin

et al. 2020

Advanced Intelligent Systems

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Automated defect inspection technology has been widely investigated in a variety of fields, including the semiconductor and integrated circuit industry, [1-3] engineering and science, [4,5] and medical applications, [6,7] to overcome the drawbacks of manual detection methods, which are imprecise and timeconsuming. Various image processing approaches of defect identification such as filtering, structuring, and statistical methods have been recently developed to recognize the defective information from input images. [8-10] However, most defects are of irregular shape and size, while the inspection area is large, and thus the complexity of the input data for defect inspection is usually high. Therefore, high computational power along with large power consumption and long processing times is generally required to operate defect identification algorithms using the von Neumann architecture based computing system due to a memory wall problem between the microprocessor and storage memory. [11] To ameliorate these issues, here we have used a nonvolatile memory based neuromorphic computing system that imitates the human brain's operation combined with a software algorithm for the defect identification process. [12,13] Among them, memristor-based crossbar array based neuromorphic computing has received great attention due to its scalability and computing-in-memory features. [13-18] Cross-point structured memristors, nevertheless, have suffered from cell-to-cell interferences due to the sneak path currents through neighboring memristor pixels that lead to unnecessary power dissipation and inaccurate operations. [19] To precisely modulate the resistance of each memristor, the memristor-based array is usually integrated with a selector device (switching component) such as silicon (Si)-metal-oxide field-effect transistor (MOSFET), which is known as 1-transistor and 1-resistor (1T1R) structure. [20-23] The 1T1R architecture allows us to precisely program individual memristors using the

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Section: Structural and Electrical Properties Of The 1t1r Pixelmentioning

confidence: 99%

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

Lee

Baek

Lin

et al. 2020

Advanced Intelligent Systems

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“…In industry, the metal oxide composition material InGaZnO 4 (IGZO) was originally proposed for display applications . Due to its high transparency, uniformity, and mobility, IGZO has significant attention for various applications and their related TFT reliability issues . In addition, IGZO has a WBG characteristic of 3.1–3.4 eV, depending on the composition ratio .…”

Section: Comparisons Of the Features Of Many Other Uv Sensing Devicesmentioning

confidence: 99%

A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

Chen

Tsao

Chien

et al. 2019

Adv Materials Technologies

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produces some real risks, including wrinkles, pigmented flat spots known as liver spots, and even skin cancer. [1][2][3][4] These are mostly attributed to the effects of UV light, a shorter wavelength than the visual spectrum. Therefore, over the past decades, developments in UV sensors have received significant attention for their potential positive effects on human health.When considering the performance of many different UV sensors, required features include high sensitivity, stability, and linearity. Most importantly, a compact design compatible with current device fabrication process is key for low-cost production. [5,6] Previous studies mostly focused on a two terminal photodiode device based on wide bandgap (WBG) semiconductor materials such as TiO 2 , SiC, and ZnO materials. [7][8][9] Later, some III-V compounds, such as gallium nitride (GaN), also received attention as UV photodetector materials. [10,11] Some metal-semiconductor-metal (MSM) structures have also been proposed to simplify device fabrication processes. [7][8][9][10][11][12] Although such WBG-based UV sensors have the advantages of a simple structure and high intrinsic visible-blindness; numinous drawbacks such as poor crystal quality or high activation energy of dopants have slowed developments. In addition, UV-sensing devices have received significant recent attention for applications in areas such as human health, fire detection, and optical communication.One key factor for product commercialization is determining the optimal materials that allow for integration of excellent UV-sensing properties with compatibility with industrial fabrication processes. However, current UV sensors often fail to achieve this due to either mismatched materials or a device that must be excessively large in order to produce enough photocurrent for UV detection. The UV-light-sensing properties of an amorphous InGaZnO 4 (IGZO) thin-film transistor with a dual-gate structure and relatively small device size (width/length = 50 μm/10 μm) that achieves high sensitivity through a threshold-voltage-(V th )-adjustment method is proposed. Comparing the drain currents under UV exposure to those under darkened conditions indicates that the ratio between the photoinduced and dark current reaches 10 6 . Furthermore, the UV sensitivity of the dual-gate transistors can be adjusted by varying the bottom gate voltage, with each pixel of the sensor then being read out separately via scan line pulses. This allows the dual-gate a-IGZO transistor to be used for high-performance UV sensing while being effectively integrated in display applications. SensorsAlmost all living things on Earth rely on the sun for nutrition and survival, whether directly or indirectly. The sun provides radiant heat, and gives energy to plants for the photosynthesis process, thus providing basic needs and food for creatures and humans. However, exposure to the sun for human beings also

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“…In order to solve this issue, lots of memory structures were studied widely. First, an extra nonlinear access device was directly connected to each RRAM cell to suppress the sneak path current, such as one-transistor one-resistor (1T1R), [14,15] one-diode one-resistor (1D1R), [16,17] one-selector one-resistor (1S1R). [18,19] Second, complementary resistive switching (CRS) [20,21] was a new resistive memory structure, which performed a symmetrical performance and avoided sneak path current effectively.…”

Section: Doi: 101002/aelm201900756mentioning

confidence: 99%

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer

Chen

Zhang

et al. 2019

Adv Elect Materials

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Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

Cited by 34 publications

References 29 publications

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer

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Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

Cited by 34 publications

References 29 publications

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

A Dual‐Gate InGaZnO4‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer

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A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection