This study demonstrates the integration of a thin film transistor (TFT) and resistive random-access memory (RRAM) to form a one-transistor-one-resistor (1T1R) configuration. With the concept of the current conducting direction in RRAM and TFT, a triple-layer stack design of Pt/InGaZnO/Al2O3 is proposed for both the switching layer of RRAM and the channel layer of TFT. This proposal decreases the complexity of fabrication and the numbers of photomasks required. Also, the robust endurance and stable retention characteristics are exhibited by the 1T1R architecture for promising applications in memory-embedded flat panel displays.
CdSe nanocrystals (NCs) with different morphologies have been synthesized and applied as the acceptor in the active layer of the organic photovoltaic (OPV) devices. CdSe tetrapod (TP)/nanorod (NR) with zinc-blended seeds and wurtzite arms is prepared by seed growth method and mixed with poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). When the concentrations of CdSe in P3HT: PCBM system are 50 wt% optimally, the efficiency can be promoted about 4.3%, suggesting that an enhancement of 13.2% can be obtained and the addition of anisotropic CdSe NCs content in the active layer can be beneficial for the transport of electrons and light absorption in the OPV devices.
This study explores the optical field distribution of 1.55μm InGaAsP distributed feedback Laser with an air gap in the middle section. The optical field distribution was analyzed by different depth and width of an air gap. From the calculation, we could observe how the gap affect the coupling of the optical field into the other cavity. The percentage of the coupling is a crucial factor to the injection-locking operation. Both effective index model and commercial software were used to predict this coupling.
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