Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process

Lin, Yen‐Hung; Faber, Hendrik; Rossbauer, Stephan; Anthopoulos, Thomas D.

doi:10.1063/1.4804434

Cited by 39 publications

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“…We have previously shown that electron transport in ZnO-NPs TFTs is both a percolation and a trap-limited process dictated primarily by the poor inter-NPs coupling and the presence of surface trap states. 20 Recently, the passivation of these surface states has been achieved with the application of organic materials atop the metal oxide. [28][29][30] To investigate the potential of this approach, we deposited a PS layer atop the ZnO-NPs.…”

Section: Moreover the Hybrid Lamellar-like Channel Design Enables Inmentioning

confidence: 99%

“…Looking beyond metal-salt precursors, which represent the state of the art in processing solution-based metal oxide TFTs, 10,12 suspensions of pre-formed nanomaterials, such as nanocrystals (NCs) or nanowires (NWs), are now emerging as promising candidates due to their long range crystallinity and potential for enhanced charge transport. 19,20 Moreover, pre-synthesized nanomaterials do not rely on high temperature annealing often used in conjunction with conventional metal-salt precursors for the in-situ synthesis of metal oxides, as well as for eliminating organic residues 10 that are known to deteriorate charge transport. 21 Despite the promising potential, however, the use of oxide nanomaterials in transistors faces significant challenges that extend beyond layer crystallinity.…”

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confidence: 99%

“…23,24 To address these challenges, different approaches have been proposed, including ultraviolet ozone (UV-ozone) treatment of the NC layers to remove the ligands and enhance the inter-particle coupling. 20,22 Suspending the nanomaterials in an organic semiconductor binder has also been exploited. 25 In spite of past efforts, however, the performance of metal oxide NC-based TFTs has remained inferior to devices created via the conventional precursor synthesis.…”

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Hybrid organic–metal oxide multilayer channel transistors with high operational stability

et al. 2019

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Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor deposition methods. Transition to simpler, higher throughput manufacturing methods such as solution-based processes, are currently been explored as cost-effective alternatives. However, developing printable oxide transistors with high carrier mobility and bias-stable operation has proved challenging. Here we show that hybrid multilayer channels composed of alternating ultra-thin layers (≤4 nm) of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and a compact zinc oxide layer, all solution-processed in ambient atmosphere, can be used to create TFTs with remarkably high electron mobility (50 cm 2 /Vs) and record operational stability. Insertion of the ozone-treated polystyrene interlayer is shown to reduce the concentration of electron traps at the metal oxide surfaces and heterointerfaces. The resulting transistors exhibit dramatically enhanced bias stability over 24 h continuous operation and while subjected to large electric-field flux density (2.1×10 -6 C/cm 2 ) with no adverse effects on the electron mobility. Density functional theory calculations identify the origin of this enhanced stability as the passivation of the oxygen vacancy-related gap states due to interaction between ozonolyzed styrene moieties and the oxides. Our results sets new design guidelines for bias-stress resilient metal oxide transistors. Main textMoving away from sophisticated, capital intensive manufacturing processes, soluble semiconductors 1,2,3 not only promise to deliver devices with unusual physical characteristics and enhanced performance, but also trigger a paradigm shift in manufacturing philosophy by embracing scalable, cost-effective processes such as chemical spray pyrolysis, 4 ink-jet printing, 5 slot-die coating, 6 among others. As consequence the interest in solution-based manufacturing of consumer electronics is rapidly increasing with global tech giants investing heavily in emerging forms of printed electronics. 7 Among a variety of soluble electronic materials, oxide semiconductors offer a breadth of intriguing assets, including high charge carrier mobility, 8 optical transparency, 9 versatile synthesis, 10 low manufacturing cost 11 etc., the combination of which makes them ideal for use in a range of rapidly emerging applications in the field of printed electronics. Among them, thin-film transistor (TFTs) technologies are a priority for solution processable oxides as they promise to amplify the technological impact of their vacuum-grown counterparts 11 by reducing the manufacturing cost. For these reasons, continuous research efforts have been devoted to improving the operating characteristics of

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Section: Moreover the Hybrid Lamellar-like Channel Design Enables Inmentioning

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confidence: 99%

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Hybrid organic–metal oxide multilayer channel transistors with high operational stability

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“…To study this effect we calculated the interface trap density (N tr ) and trap concentration (D tr , per unit area and unit energy) using the following equations: 55,56 …”

Section: Uv-vis Absorption Spectroscopymentioning

confidence: 99%

Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

et al. 2018

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Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

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“…For example, Kwack and W.-S. Choi 2 and Kim et al 3 have reported solution-processed Zinc tin oxide (ZTO) TFTs with carrier mobilities of 4.9 and 6.0 cm 2 /Vs using a high temperature annealing processes at 300 C and 500 C, respectively. Much research is now focused on postdeposition processing as part of an effort to keep the temperature below 150 C. Indium zinc oxide (IZO) TFTs have achieved a mobility of 1.8 cm 2 /Vs by using high-pressure annealing (HPA) following thermal annealing at 220 C. 4 Similarly, UV light irradiation 5 and microwave-assisted annealing 6 have been adopted as useful post-deposition processes. Various passivation layers have also been used to reduce the effects of environmental factors, which lead to poor device stability.…”

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Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors

Jeong

Pearson

Lee

et al. 2014

Journal of Applied Physics

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. The effects of hydrogen plasma treatment on the active layer of top-contact zinc oxide thin film transistors are reported. The transfer characteristics of the reference devices exhibited large hysteresis effects and an increasing positive threshold voltage (V TH ) shift on repeated measurements. In contrast, following the plasma processing, the corresponding characteristics of the transistors exhibited negligible hysteresis and a very small V TH shift; the devices also possessed higher field effect carrier mobility values. These results were attributed to the presence of functional groups in the vicinity of the semiconductor/gate insulator interface, which prevents the formation of an effective channel. V C 2014 AIP Publishing LLC.[http://dx

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Solution-processed ZnO nanoparticle-based transistors via a room-temperature photochemical conversion process

Abstract: Articles you may be interested inEffects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors

Cited by 39 publications

References 31 publications

Hybrid organic–metal oxide multilayer channel transistors with high operational stability

Hybrid organic–metal oxide multilayer channel transistors with high operational stability

Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors

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