ABSTRACT-It is widely accepted that unconscious processes can modulate judgments and behavior, but do such influences affect one's daily interactions with other people? Given that olfactory information has relatively direct access to cortical and subcortical emotional circuits, we tested whether the affective content of subliminal odors alters social preferences. Participants rated the likeability of neutral faces after smelling pleasant, neutral, or unpleasant odors delivered below detection thresholds. Odor affect significantly shifted likeability ratings only for those participants lacking conscious awareness of the smells, as verified by chance-level trial-by-trial performance on an odor-detection task. Across participants, the magnitude of this priming effect decreased as sensitivity for odor detection increased. In contrast, heart rate responses tracked odor valence independently of odor awareness. These results indicate that social preferences are subject to influences from odors that escape awareness, whereas the availability of conscious odor information may disrupt such effects.

Utilization of CO2 and its conversion to value-added chemicals are highly desirable to alleviate the environmental concerns caused by the massive anthropogenic CO2 emission. Although In2O3/Pd have been employed as efficient catalysts for hydrogenation of CO2 to methanol, the electronic effects by strong metal–support interaction (SMSI) between Pd and In2O3 are poorly understood, which is greatly affected by the morphology of In2O3. Herein, we use MIL-68­(In) nanorod as a morphological template for the synthesis of hollow In2O3 nanotubes (h-In2O3) and the preparation of supported Pd catalysts for CO2 hydrogenation to methanol. Interestingly, loading Pd on h-In2O3 showed a much higher performance than In2O3 with other morphologies, which exhibited almost unchanged CO2 conversion of 10.5%, methanol selectively of 72.4%, and methanol space-time yield of 0.53 gMeOH h–1 gcat –1 over 100 h on stream at 3 MPa and 295 °C. After in-depth characterizations, we found that the different electronic properties of Pd species on In2O3 can be finely tuned by diverse synthetic conditions, which were responsible for high activity and stability. The molar fraction of Pd2+ species in the h-In2O3/Pd catalyst reached 67.6%, 3.2 times that of the In2O3@Pd catalyst (21.3%), due to the different surface chemistry of In2O3. Density function theory results indicated that the Pd donated more electrons to the curved In2O3 (222) surface than the pristine surface, and Pd2+ was critical to facilitate H2 adsorption and formation of the surface oxygen vacancy. This work demonstrates that controlling the morphology of In2O3 can modify both the Pd electronic property and SMSI between Pd and In2O3, which are the origins of the high catalytic performance.

Metal oxide thin-film transistors are fast becoming a ubiquitous technology for application in driving backplanes of organic light-emitting diode displays. Currently all commercial products rely on metal oxides processed via physical vapor deposition methods. Transition to simpler, higher throughput manufacturing methods such as solution-based processes, are currently been explored as cost-effective alternatives. However, developing printable oxide transistors with high carrier mobility and bias-stable operation has proved challenging. Here we show that hybrid multilayer channels composed of alternating ultra-thin layers (≤4 nm) of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and a compact zinc oxide layer, all solution-processed in ambient atmosphere, can be used to create TFTs with remarkably high electron mobility (50 cm 2 /Vs) and record operational stability. Insertion of the ozone-treated polystyrene interlayer is shown to reduce the concentration of electron traps at the metal oxide surfaces and heterointerfaces. The resulting transistors exhibit dramatically enhanced bias stability over 24 h continuous operation and while subjected to large electric-field flux density (2.1×10 -6 C/cm 2 ) with no adverse effects on the electron mobility. Density functional theory calculations identify the origin of this enhanced stability as the passivation of the oxygen vacancy-related gap states due to interaction between ozonolyzed styrene moieties and the oxides. Our results sets new design guidelines for bias-stress resilient metal oxide transistors. Main textMoving away from sophisticated, capital intensive manufacturing processes, soluble semiconductors 1,2,3 not only promise to deliver devices with unusual physical characteristics and enhanced performance, but also trigger a paradigm shift in manufacturing philosophy by embracing scalable, cost-effective processes such as chemical spray pyrolysis, 4 ink-jet printing, 5 slot-die coating, 6 among others. As consequence the interest in solution-based manufacturing of consumer electronics is rapidly increasing with global tech giants investing heavily in emerging forms of printed electronics. 7 Among a variety of soluble electronic materials, oxide semiconductors offer a breadth of intriguing assets, including high charge carrier mobility, 8 optical transparency, 9 versatile synthesis, 10 low manufacturing cost 11 etc., the combination of which makes them ideal for use in a range of rapidly emerging applications in the field of printed electronics. Among them, thin-film transistor (TFTs) technologies are a priority for solution processable oxides as they promise to amplify the technological impact of their vacuum-grown counterparts 11 by reducing the manufacturing cost. For these reasons, continuous research efforts have been devoted to improving the operating characteristics of