The influence of crystalline morphology on the mechanical fatigue of organic semiconductors (OSCs) was investigated using 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) as a crystalline OSC and poly(triarylamine) (PTAA) as an amorphous OSC. During cyclic bending, resistances of the OSCs were monitored using the transmission-line method on a metal-semiconductor-metal structure. The resistance of the TIPS-pentacene increased under fatigue damage in tensile-stress mode, but no such degradation was observed in the PTAA. Both OSCs were stable under compressive bending fatigue. The formation of intergranular cracks at the domain boundaries of the TIPS-pentacene was responsible for the degradation of its electrical properties under tensile bending fatigue.
Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders. The effects of hydrogen plasma treatment on the active layer of top-contact zinc oxide thin film transistors are reported. The transfer characteristics of the reference devices exhibited large hysteresis effects and an increasing positive threshold voltage (V TH ) shift on repeated measurements. In contrast, following the plasma processing, the corresponding characteristics of the transistors exhibited negligible hysteresis and a very small V TH shift; the devices also possessed higher field effect carrier mobility values. These results were attributed to the presence of functional groups in the vicinity of the semiconductor/gate insulator interface, which prevents the formation of an effective channel. V C 2014 AIP Publishing LLC.[http://dx
. (2014) 'Zinc oxide thin-lm transistors fabricated at low temperature by chemical spray pyrolysis.', Journal of electronic materials., 43 (11). pp. 4241-4245. Further information on publisher's website:http://dx.doi.org/10.1007/s11664-014-3342-8Publisher's copyright statement:The nal publication is available at Springer via http://dx.doi.org/10.1007/s11664-014-3342-8.
Additional information:Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. We report on the electrical behaviour of undoped zinc oxide thin film transistors (TFTs) fabricated using low temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140 °C. The TFTs possessed a saturation mobility of 2 cm 2 /Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150 C. The devices also exhibited an on/off ratio of 10 4 and a threshold voltage of -3.5 V. These parameters were found to depend reversibly on the measurement ambient.
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