UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Hwang, Jaeeun; Lee, Kyung-Min; Jeong, Youn-Joong; Lee, Yong Uk; Pearson, Christopher; Petty, Michael C.; Kim, Hongdoo

doi:10.1002/admi.201400206

Cited by 45 publications

(46 citation statements)

References 40 publications

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“…This is presumably due to the superposition of three different peaks related to MeOeM networks (O j ), MÀOC bonds (O jj ), and metal hydroxide, MÀOH (O jjj ), respectively [15,36]. Therefore, the O1s XPS spectra were further investigated by de-convoluting the spectra, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Because leakage currents in metal-insulator-metal (MIM) devices are related to the density and the number of voids in the insulator film [15], we also measured leakage current densities of the ZrA films before and after UV exposure. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Their high capacitance (!700 nF/cm 2 ) and low leakage currents, even at ultrathin thicknesses of 10 nm, have facilitated reliable operation of a variety of high-performance transistors, including OFETs and inorganic nanocrystal FETs [11e14]. In addition, it has been reported that the ZrO x dielectric films could be fabricated via a low-temperature sol-gel processes such as UVassisted annealing at an inert or ambient atmosphere [15,16]. Since gate dielectrics should be patterned in practical circuit designs including complementary logic devices [17,18], commercial applications of sol-gel ZrO x dielectrics strongly require simple and low-cost patterning processes.…”

Section: Introductionmentioning

confidence: 99%

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Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters

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Nam

et al. 2016

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters

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Yun

Nam

et al. 2016

Organic Electronics

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“…Templated growth at the dielectric/semiconductor interface is another possibility that can affect carrier mobility. Previous literature provides x-ray diffraction (XRD) data for AlO x films, processed from aluminium nitrate hydrate in 2-methoxyethanol, demonstrating its amorphous nature at temperatures up to 500 • C. 16,18 Similar XRD studies on HfO x films, produced from HfCl 4 in various alcohols, exhibited no obvious crystalline peaks, leading the authors to assume it is amorphous as well. 20,34 Yet further research, using grazing incidence x-ray diffraction (GIXRD) 17 showed that a higher temperature (450 • C) spray-coating technique, also using the precursor of HfCl 4 , produced a monoclinic polycrystalline film with small crystallite sizes of <10 nm.…”

confidence: 99%

“…Both the semiconductor and dielectric layers were solution-processed at temperatures ≤ 200 • C via spincasting. The dielectric films were produced from the precursors of aluminium nitrate hydrate, 16 hafnium chloride, 17 and zirconium oxynitrate hydrate, 18 chosen due to their proven compatibility with 2-methoxyethanol or other alcohols. The semiconductor solution consisted of indium nitrate hydrate in 2-methoxyethanol.…”

confidence: 99%

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

et al. 2018

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The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the channel interface quality has become a priority. Herein, we study the impact of the surface morphology of three solution-processed high-k metal oxide dielectrics, namely AlOx, HfOx, and ZrOx, on the operating characteristics of In2O3 TFTs. Six different dielectric configurations were produced via single or double-step spin-casting of the various precursor formulations. All layers exhibited high areal capacitance in the range of 200 to 575 nF/cm2, hence proving suitable, for application in low-voltage n-channel In2O3 TFTs. Study of the surface topography of the various layers indicates that double spin-cast dielectrics exhibit consistently smoother layer surfaces and yield TFTs with improved operating characteristics manifested, primarily, as an increase in the electron mobility (µ). To this end, µ is found to increase from 1 to 2 cm2/Vs for AlOx, 1.8 to 6.4 cm2/Vs for HfOx, and 2.8 to 18.7 cm2/Vs for ZrOx-based In2O3 TFTs utilizing single and double-layer dielectric, respectively. The proposed method is simple and potentially applicable to other metal oxide dielectrics and semiconductors.

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Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

Liu

Zhu

et al. 2015

Adv Funct Materials

148

136

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7180 wileyonlinelibrary.com IntroductionIn the past decade amorphous metaloxide thin-fi lm transistors (TFTs) have been studied in depth for applications in active-matrix organic light-emitting diodes (AMOLEDs), solar cells, biosensor arrays, and photodetectors. [ 1 ] Along with the rapid developments in display technology, highresolution and high-speed displays have become one of the growing trends. In this regard, energy consumption has turned out to be an inevitable issue especially for mobile, battery-powered applications. As a low-voltage operation of the oxide TFTs is demanded for practical applications, it is necessary to develop novel gate dielectrics for producing a large areal capacitance. [ 2 ] The achievements of low-voltage oxide TFTs have been extensively reported in recent works, including the use of inorganic high-k dielectrics, [ 3 ] organic self-assembled-monolayer dielectrics, [ 4 ] and electrolyte dielectrics. [ 5 ] Among these, the use of inorganic high-k dielectrics is the most attractive option as it simultaneously enables a low leakage current, through the use of a thicker fi lm, as well as a low-voltage operation. The high-k dielectrics can be prepared by various methods such as metal anodic oxidation method, [ 6 ] vacuum-based deposition, [ 7 ] and low-cost solution-based techniques. [ 8 ] [ 12 ] silicates, [ 13 ] etc.) that could potentially replace conventional dielectrics, such as SiO 2 and SiN x . To the best of our knowledge, there are few reports on the demonstration of scandium oxide (Sc 2 O 3 ) as the gate dielectric in TFT devices.As a high-k material Sc 2 O 3 has a dielectric constant of 14, a bandgap of 6.3 eV and an excellent thermal stability with Si. [ 14 ] In addition, Sc 2 O 3 has been found to possess a negative fi xed charge. This is benefi cial to obtain a positive threshold or turnon voltage for n-type TFTs that operate in the enhancement mode. [ 15 ] Concerning the CMOS architecture development based on solution processing, a wet step is inevitably involved. In this regard, the resistance to moisture absorption is another important , a large current ratio ( I on / I off ) of 2.7 × 10 7 and high stability. Moreover, as far as we know it is the fi rst time that solution-processed p-type oxide TFTs based on a high-k dielectric are achieved. The as-fabricated p-type CuO/ScO x TFTs exhibit a large I on / I off of around 10 5 and a hole mobility of 0.8 cm 2 V −1 at an operating voltage of 3 V. To the best of our knowledge, these electrical parameters are among the highest performances for solution-processed p-type TFTs, which represents a great step towards the achievement of low-cost, all-oxide, and low-power consumption CMOS logics.

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UV‐Assisted Low Temperature Oxide Dielectric Films for TFT Applications

Cited by 45 publications

References 40 publications

Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters

Photo-patternable high-k ZrOx dielectrics prepared using zirconium acrylate for low-voltage-operating organic complementary inverters

Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

Water‐Induced Scandium Oxide Dielectric for Low‐Operating Voltage n‐ and p‐Type Metal‐Oxide Thin‐Film Transistors

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