Solution-processed PbS quantum dot infrared photodetectors and photovoltaics

Solution-processed semiconductors for next-generation photodetectors

“…This notion was further elaborated in 2005 when CdSe visible photodetectors with an inferred D* of 10 8 Jones 42 and short-wave IR PbS CQD photodetectors were both reported. 43 A new paradigm in solution processed photodetection was demonstrated in 2006, where the sequential, ordered processing of PbS CQDs led to photoconductive CQD solid films. 9 The controllable fusing and oxidation of the CQDs delivered high photo-multiplicative gain as a consequence of minority carrier trapping, yielding gains in excess of 1000, R~2700 A/W and impressive measured D* up to 2·10 13 Jones in the short-wave IR.…”

The role of surface passivation for efficient and photostable PbS quantum dot solar cells

“…Here we report on highly efficient and photostable quantum dot solar cells with efficiencies of 9.6% (and independently certificated values of 8.7%). As a result of optimised surface passivation and suppression of hydroxyl ligands-which are found to be detrimental for both efficiency and photostability-the efficiency remains within 80% after 2 1,000 hours of continuous illumination at AM1.5G. Our findings provide insights on the role of the quantum dot's surface in stability and efficiency of quantum dot solar cells.…”

“…The solution processability, quantum confinement and inorganic nature of colloidal quantum dots (QDs) have made them one of promising materials for low cost, high efficiency, third generation photovoltaic technology [1][2][3][4][5][6] . Since the first reports 1,2 , a dramatic improvement in power conversion efficiency (PCE) has been achieved overpassing 9% with PbS(Se) QDs leading the race as the material of choice 5 .…”

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

“…Many materials and structures including quantum dots [90][91][92], nanotubes [93][94][95][96], and nanowires [97][98][99] have been studied and considered to be good alternatives for silicon-based photodetectors. Interestingly, most of the 2D semiconductors are sensitive to light, heat, and ambient which makes them very attractive for applications in optoelectronic device sensing from infrared to the ultraviolet regime.…”