A hybrid phototransistor consisting of colloidal PbS quantum dots and few layers of MoS2 (≥2 layers) is demonstrated. The hybrid benefits from tailored light absorption in the quantum dots throughout the visible/near infrared region, efficient charge-carrier separation at the p-n interface, and fast carrier transport through the MoS2 channel. It shows responsivity of up to 10(6) A W(-1) and backgate-dependent sensitivity.

ABSTRACT:Integrated circuits based on CMOS (complementary metal-oxide semiconductors) are at the heart of the technological revolution of the past 40 years, as these have enabled compact and low cost micro-electronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible light cameras has been impeded by the difficulty to combine other semiconductors than silicon with CMOS. Here, we show for the first time the monolithic integration of a CMOS integrated circuit with graphene, operating as a high mobility phototransistor. We demonstrate a high-resolution image sensor and operate it as a digital camera that is sensitive to UV, visible and infrared light (300 -2000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2d materials into the next generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and even terahertz frequencies.2

For any emerging photovoltaic technology to become commercially relevant, both its power conversion efficiency and photostability are key parameters to be fulfilled. Colloidal quantum dot solar cells are a solution-processed, low-cost technology that has reached efficiency about 9% by judiciously controlling the surface of the quantum dots to enable surface passivation and tune energy levels. However, the role of quantum dot's surface on the stability of these solar cells has remained elusive. Here we report on highly efficient and photostable quantum dot solar cells with efficiencies of 9.6% (and independently certificated values of 8.7%). As a result of optimised surface passivation and suppression of hydroxyl ligands-which are found to be detrimental for both efficiency and photostability-the efficiency remains within 80% after

The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector device by integrating a colloidal quantum dot photodiode atop a graphene phototransistor. Our hybrid detector overcomes the limitations of a phototransistor in terms of speed, quantum efficiency and linear dynamic range. We report quantum efficiencies in excess of 70%, gain of 105 and linear dynamic range of 110 dB and 3 dB bandwidth of 1.5 kHz. This constitutes a demonstration of an optoelectronically active device integrated directly atop graphene and paves the way towards a generation of flexible highly performing hybrid two-dimensional (2D)/0D optoelectronics.

The hybridization of two-dimensional transition metal dichalcogenides (TMDCs) withcolloidal quantum dots has been demonstrated to be an ideal platform for low darkcurrent and highly sensitive photodetection due to a carrier recirculation mechanism producing very high gain. However, TMDCs react sensitively to surface modifications and the sensitizing quantum dots introduce uncontrolled doping, which prevent these hybrids from reaching large on/off ratios, met in pristine 2D transistors. In this work,