Solution-processed field-effect transistors based on polyfluorene –cesium lead halide nanocrystals composite films with small hysteresis of output and transfer characteristics

Алешин, А. Н.; Щербаков, И. П.; Гущина, Е. В.; Matyushkin, L. B.; Мошников, В. А.

doi:10.1016/j.orgel.2017.08.004

Cited by 44 publications

(22 citation statements)

References 23 publications

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“…Therefore, our heterojunction phototransistors can employ both the applied gate voltage and the incident light intensity to modulate the photocurrent, which have great potential applications in sensing, imaging, optical logic, etc. All these key parameters ( R , D *, I light / I off ratio) of our heterojunction phototransistors have more satisfactory values compared with those of most IPQD‐based photodetectors reported (see Table S1, Supporting Information) . The IPQD/graphene hybrid photodetectors showed very high R , however, D *, and I light / I off ratio are relatively low because of the high dark current.…”

Section: Resultsmentioning

confidence: 58%

A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

Zou

Huang

et al. 2018

Advanced Optical Materials

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yields with narrow emission bandwidth, size tunable optical properties, strong optical absorption, and more impor tantly, good environmental stabilities. [1][2][3] They have also been applied to develop high performance solar cells, light emit ting diodes (LEDs) and lasers. [4][5][6][7] Several recent works [8][9][10][11] have pioneered the appli cation of IPQDs in photodetectors with vertical (photodiode) and lateral (photo conductor and photo transistor) device structures. However, most of them show low responsivity up to ≈0.64 A W −1 . The reported responsivities of IPQD devices are limited by poor carrier mobility due to the choice of interparticle ligand mate rials and high density of defect states. [12] To develop highresponsivity photodetec tors, it is vital to increase carrier diffu sion length. One approach is to decrease the density of defects and increase car rier mobility, which has been a prevalent research topic. [13] However, an alternative method to increase responsivity is to separate electrons and holes into different paths and suppress radiative recombination with the aid of layered heterojunction (LHJ). [14] This strategy should facili tate the extractions of generated carriers and thus increase the photocurrent. There are some recent works adopting this strategy and thus improving the responsivity. Zhou et al. [15] fab ricated CsPbBr 3 QD/TiO 2 compositebased photodetectors and obtained a 44fold responsivity enhancement compared to pris tine CsPbBr 3 QD photodetectors over the detection range from 350 to 550 nm. Chen et al. [16] reported hybrid phototransistors based on CsPbBr 3 QD/DTT heterojunctions and achieved the responsivity up to 1.7 × 10 4 A W −1 , however, the detection range only reached up to green wavelength on the long side. Kwak et al. [17] fabricated CsPbBr 3-x I x QD/graphene bilayer photode tectors, exhibiting a very high responsivity (≈10 8 A W −1 ) but a decent onoff ratio, the detection wavelength range is limited up to ≈650 nm. These findings encourage us to use a LHJ film in the photodetector to enhance the performance. Although such IPQDbased hybrid photodetectors exhibit high respon sivity, the detection wavelength regions are still restricted to ultravioletvisible (UV-vis) range and cannot reach near infrared (NIR) region. Furthermore, among all reported IPQD detectors, few of them are based on CsPbI 3 QDs and targeted All-inorganic perovskite quantum dots (IPQDs) are a promising material for use in various optoelectronic devices due to their excellent optoelectronic properties and high environmental stability. Here, a high-performance phototransistor based on a layered heterojunction composed of CsPbI 3 QDs and a narrow-bandgap conjugated polymer DPP-DTT is reported, which shows a high responsivity of 110 A W −1 , a specific detectivity of 2.9 × 10 13 Jones and a light to dark current ratio up to 6 × 10 3 . The heterojunction phototransistor exhibits unipolar p-type and gate bias modulated behaviors. In addition, the device exhibits a broad spectral detection range f...

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Section: Resultsmentioning

confidence: 58%

A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

Zou

Huang

et al. 2018

Advanced Optical Materials

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“…An alternative strategy to mitigate the ion‐screening effect and obtain room‐temperature AIPe FETs is to directly blend the AIPe with organic semiconductors. Aleshin et al fabricated BC/BG FETs based on blend composites of CsPbI 3 and a conjugated polymer poly[9,9‐bis‐(2‐ethylhexyl)‐9H‐fluorene‐2,7‐diyl] (PFO) . The hole mobility was calculated to be 0.19 cm 2 V −1 s −1 in the linear regime of the transfer characteristics at 300 K. Although the cross‐sectional of the CsPbI 3 /PFO composite was not investigated, it is reasonable to assume that no thick AIPe thin film in this case can fully cover the dielectric surface, thereby mitigating the ion‐screening effects.…”

Section: Transistors Based On Metal Halide Perovskitesmentioning

confidence: 99%

“…For instance, the solution‐processable MHP nanocrystals can be easily spin‐coated onto transistor substrate. The thickness of obtained nanocrystal thin films can be easily controlled to reduce the pinholes and improve the light absorption capability . Regarding MHP nanowires, the large lateral dimension of nanowires can facilitate the bridge across the transistor channel with good contacts with metal electrodes.…”

Section: Transistors Based On Metal Halide Perovskitesmentioning

confidence: 99%

Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field‐Effect Transistors

Liu

Song

et al. 2018

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103

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The past several years have witnessed tremendous developments of metal halide perovskite (MHP)-based optoelectronics. Particularly, the intensive research of MHP-based light-emitting diodes, photodetectors, and solar cells could probably reform the optoelectronic semiconductor industry. In comparison, in spite of the large intrinsic charge carrier mobility of MHPs, the development of MHP-based field-effect transistors (MHP-FETs) is relatively slow, which is essentially due to the gate-field screening effect induced by the ion migration and accumulation in MHP-FETs. This work mainly aims to summarize the recent important work on MHP-FETs and propose solutions in terms of the development bottleneck of perovskite-based transistors, in an attempt to boost the research of MHP transistors further. First, the advantages and potential applications of MHP-FETs are briefly introduced, which is followed by a detailed description of the MHP crystalline structure and various material fabrication techniques. Afterward, MHP-FETs are discussed, including transistors based on hybrid organic-inorganic perovskites, all-inorganic perovskites, and lead-free perovskites.

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“…Органические полевые транзисторы (OFET) на основе определенных видов кристаллов ТФСО де-монстрировали значения подвижности носителей заряда 7 · 10 −2 −9 · 10 −2 cm 2 /(V · s) [10]. Это является доста-точно высоким значением OFET-подвижности для од-нокомпонентных органических материалов, однако при использовании гибридных органических/неорганических материалов возможно достижение значений OFET-под-вижности порядка 1 cm 2 /(V · s) [12][13][14]. В результате исследований тонких и сверхтонких (десятки-сотни нанометров) пленок ТФСО, сформи-рованных путем термического вакуумного осаждения, была также показана перспективность в плане разра-ботки OLED устройств, продемонстрированы диодные характеристики при использовании чередующихся сло-ев ТФСО n-и p-типа проводимости [6,7].…”

Section: Introductionunclassified

Незаполненные Электронные Состояния И Формирование Интерфейса Между Пленками Диметил Замещенных Тиофен- Фенилен Соолигомеров И Поверхностью Окисленного Кремния

Komolov¹,

Лазнева²,

Герасимова³

et al. 2018

Физика Твердого Тела

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Приведены результаты исследования незаполненных электронных состояний и пограничного потенци-ального барьера при осаждении сверхтонких пленок диметил замещенных тиофен-фенилен соолигомеров вида СH 3 -фенилен-тиофен-тиофен-фенилен-СH 3 (СH 3 −PTTP−CH 3 ) на поверхность окисленного кремния. Измерения электронных характеристик проводились в энергетическом диапазоне от 5 до 20 eV выше уровния Ферми методом спектроскопии полного тока (СПТ). Диагностика структуры поверхности пленок СH 3 −PTTP−СH 3 выполнялась методом атомной силовой микроскопии (AFM) и диагностика их атомного состава -методом рентгеновской фотоэлектронной спектроскопии (XPS). Проведен анализ изменения интенсивностей максимумов, измеряемых СПТ, исходящих от осаждаемой пленки СH 3 −PTTP−CH 3 и от подложки, в процессе увеличения толщины органического покрытия до 6 nm. Формирование пограничного потенциального барьера в исследованной структуре n-Si/SiO 2 /СH 3 −PTTP−CH 3 сопровождалось снижением работы выхода поверхности от 4.2 ± 0.1 до 4.0 ± 0.1 eV при увеличении толщины органического покрытия до 3 nm. Соотношение концентраций атомов C : S в исследованных пленках СH 3 −PTTP−CH 3 хорошо соответствует химической формуле молекул СH 3 −PTTP−СH 3 . Шероховатость поверхности покрытия СH 3 −PTTP−СH 3 не превышала 10 nm на участках площадью порядка 10 × 10 µm при общей толщине слоя СH 3 −PTTP−СH 3 около 100 nm. (15-29-05786-офи-м, 18-03-00020-а, 18-03-00179-а). Синтез СH 3 −PTTP−CH 3 выполнен при поддержке гранта Российского научного фонда № 15-12-30031. В работе использовали оборудование научного парка СПбГУ " Физические методы исследования поверхности" и " Диагностика функциональных материалов для медицины, фармакологии и наноэлектроники". Работа выполнена при поддержке РФФИ

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Solution-processed field-effect transistors based on polyfluorene –cesium lead halide nanocrystals composite films with small hysteresis of output and transfer characteristics

Cited by 44 publications

References 23 publications

A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

A Highly Sensitive UV–vis–NIR All‐Inorganic Perovskite Quantum Dot Phototransistor Based on a Layered Heterojunction

Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field‐Effect Transistors

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