Metal Halide Perovskites: Synthesis, Ion Migration, and Application in Field‐Effect Transistors

Abstract

The past several years have witnessed tremendous developments of metal halide perovskite (MHP)-based optoelectronics. Particularly, the intensive research of MHP-based light-emitting diodes, photodetectors, and solar cells could probably reform the optoelectronic semiconductor industry. In comparison, in spite of the large intrinsic charge carrier mobility of MHPs, the development of MHP-based field-effect transistors (MHP-FETs) is relatively slow, which is essentially due to the gate-field screening effect induced by the ion migration and accumulation in MHP-FETs. This work mainly aims to summarize the recent important work on MHP-FETs and propose solutions in terms of the development bottleneck of perovskite-based transistors, in an attempt to boost the research of MHP transistors further. First, the advantages and potential applications of MHP-FETs are briefly introduced, which is followed by a detailed description of the MHP crystalline structure and various material fabrication techniques. Afterward, MHP-FETs are discussed, including transistors based on hybrid organic-inorganic perovskites, all-inorganic perovskites, and lead-free perovskites.

All‐Inorganic CsPbX3 Perovskite Solar Cells: Progress and Prospects

“…TheA -site cation is too large to form aperovskite configuration when t > 1, whereas when t < % 0.8, the A-site cation is too small to form the perovskite. [31] For CsPbI 3 ,the undesirable phase transition is because the size of the Cs + cation is too small (Cs + ,with an ionic radius of 1.81 , is considerably smaller than the organic ones MA + (2.70 )or FA + (2.79 ). ForC sPbI 3 , t is 0.81-0.84 (depending on which values of ionic radii are used) which limits its black a-phase stability.…”

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

“…[29] Molecules with hydrophobic tail groups (e.g., octadecyl phosphonic acid and (tri-decafluoro-1,1,2,2-tetrahydro octyl)trichlorosilane) were printed on the gate oxide surface to differentiate the substrate surface chemically and to confine the self-assembly of thin films. [32,38,134] The same group [35] also fabricated n-type FETs based on PEA 2 SnI 4 . [29] Matsushima et al deposited PEA 2 SnI 4 films on top of octadecyl trichlorosilane vapor treated substrates to improve the organization of active layer close to the surface.…”

Ambient Air Stability of Hybrid Perovskite Thin‐Film Transistors by Ambient Air Processing

“…Despite the efforts of many investigations, this problem of ion migration-induced hysteresis remains unsolved. [30][31][32][33][34][35][36][37][38][39] Although there is evidently abundant literature on techniques to enhance the PCE of solar cells, the development of perovskite TFTs is still lagging, given that most of these techniques do not directly apply to TFTs. In planar perovskite TFTs, for instance, the lateral conductance of the perovskite film is controlled by a voltage applied to the gate.…”

“…If these conditions are not met, the TFTs will exhibit very poor switching characteristics and require impractically high driving voltages, as is evident in most of the previously reported perovskite TFTs. [22][23][24][25][26][27][28][29][30][31][32][33][34] Performance optimization and operational stability improvement are thus required before hybrid perovskite TFTs can be applied to any practical application.Furthermore, most of the reported highly efficient hybrid perovskite devices are fabricated and stored in well-controlled inert environments because organic materials are extremely sensitive to water and oxygen in ambient air. Therefore, the precursor materials need to be anhydrous, and the preparation process should be conducted in a well-controlled glovebox.…”

“…If these conditions are not met, the TFTs will exhibit very poor switching characteristics and require impractically high driving voltages, as is evident in most of the previously reported perovskite TFTs. [22][23][24][25][26][27][28][29][30][31][32][33][34] Performance optimization and operational stability improvement are thus required before hybrid perovskite TFTs can be applied to any practical application.…”