2005
DOI: 10.1016/j.jcrysgro.2004.11.321
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Solution growth of n-type - single crystals using Sn solvent

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Cited by 12 publications
(8 citation statements)
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“…The mobilities of n-type crystals were 3-6 cm 2 /V s, which are approximately one order of magnitude lower than the value of p-type crystal. The values of our mobility were similar to typical values of n-type b-FeSi 2 single crystals grown by CVT and TGSG method [4,5,7]. Fig.…”
Section: Resultssupporting
confidence: 84%
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“…The mobilities of n-type crystals were 3-6 cm 2 /V s, which are approximately one order of magnitude lower than the value of p-type crystal. The values of our mobility were similar to typical values of n-type b-FeSi 2 single crystals grown by CVT and TGSG method [4,5,7]. Fig.…”
Section: Resultssupporting
confidence: 84%
“…The p(T) and n(T) curves of ]1 and ]2 had two different slopes in the carrier freeze-out region due to the difference of compensation conditions. We analyzed the p(T) and n(T) curves by means of a simple carrier compensation model [5,7]. The results are given in Table 2, where E D and E A are the ionization energy of donor and acceptor, and N D and N A the densities of donor and acceptor, respectively.…”
Section: Article In Pressmentioning
confidence: 99%
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“…These E d values are extremely close. The results are consistent with those of n-type b-FeSi 2 single crystals prepared by the temperature-gradient solution growth method [18]. Therefore, it can be concluded that the kinds of the impurities in every samples are the same.…”
Section: Electrical Properties Of As-grown and Annealed B-fesi 2 Singsupporting
confidence: 85%
“…[7][8][9][10][11] In this paper, we report the low-temperature thermoelectric properties of p-type -FeSi 2 single crystals grown by a temperature gradient solution growth (TGSG) method using Ga solvent.…”
Section: Introductionmentioning
confidence: 99%