Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent

Udono, Haruhiko; Aoki, Yumiko; Suzuki, Hirokazu; Kikuma, Isao

doi:10.1016/j.jcrysgro.2006.04.024

Cited by 6 publications

(1 citation statement)

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“…N-type β-FeSi 2 single crystals were also grown using Sn-, 48) Sb-, 49) and Ni-doped Zn solvent 50) at temperatures even higher (∼850-900 °C) that those used for CVT growth (∼750-850 °C). That is why, we can assume appearance of anomalies similar to those reported for crystals grown by the CVT method.…”

Section: Impurity (Defect) Band Conductionmentioning

confidence: 99%

Transport properties of β-FeSi₂

Arushanov

Лисунов

2015

Jpn. J. Appl. Phys.

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The aim of this paper is to summarize considerable experimental efforts undertaken within the last decades in the investigations of transport properties of β-FeSi2. The β-FeSi2 compound is the most investigated among a family of semiconducting silicides. This material has received considerable attention as an attractive material for optoelectronic, photonics, photovoltaics and thermoelectric applications. Previous reviews of the transport properties of β-FeSi2 have been given by Lange and Ivanenko et al. about 15 years ago. The Hall effect, the conductivity, the mobility and the magnetoresistance data are presented. Main attention is paid to the discussion of the impurity (defect) band conductivity, the anomalous Hall effect, the scattering mechanisms of charge carriers, as well as to the hopping conduction and the magnetoresistance.

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Section: Impurity (Defect) Band Conductionmentioning

confidence: 99%