Photoreflectance spectra obtained from epitaxial films of semiconducting  − FeSi 2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934Ϯ 0.002 eV at 75 K, we find an additional weak structure at a lower energy. We attribute the origin of this spectral feature to indirect transitions assisted by the emission of a phonon. From our analysis, we determine an indirect gap energy of 0.823Ϯ 0.002 eV at 75 K.