Solubility and Diffusivity of Gold, Iron, and Copper in Silicon

Radial PN junction, wire array solar cells

“…[72] This is consistent with our work on the single-wire optoelectronic characterization of these wires, which indicates that minority hole diffusion lengths are ∼ 2 μm in as-grown Si wires. [55] This is also consistent with the notion that the vapor-liquid-solid (VLS) catalyst is being incorporated into the growing crystal at its solubility limit at the growth temperature, [69] at least for wires of the size scale considered here, and under our growth conditions.…”

Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers

“…One of the most important results to be mentioned is the accurate determination of copper diffusivity at low temperatures and prediction of the dependence of effective copper diffusivity on the wafer doping level and temperature. Indeed, there have been several studies of copper diffusivity in the past [25,26]. These studies mostly used radiotracer measurements, a technique that was successfully used to measure diffusivity of nearly all transition metals.…”

“…1. Effective diffusion coefficients of copper in silicon calculated for different boron doping levels (lines) and experimental data obtained by our group [38] (circles, N a 1.5 Â 10 14 cm ± ±3 and diamonds, N a 2 Â 10 15 cm ± ±3 ), by Struthers [25] (open triangle), and by Hall and Racette [26] (triangles, N a 5 Â 10 20 cm ± ±3 ). (1) Intrinsic silicon, (2) N a 1.5 Â 10 14 , (3) 2 Â 10 15 , (4) 1 Â 10 17 , (5) 5 Â 10 20 cm ± ±3 room temperature, and a significant potential barrier is required to suppress precipitation of highly mobile copper.…”

EPR Observation of an Au‐Fe Complex in Silicon: I. Experimental Data

“…It diffuses interstitially in silicon with a diffusion constant of about 7 x 10-6cm2s-1at 1200 "C 1141. Solubility of iron in silicon is about 5 x 1015cm-3 a t 1200 "C [14]. Upon quenching from a high temperature iron is frozen in a tetrahedral interstitial site.…”