Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers

Istratov, A. A.; Flink, C.; Weber, E. R.

doi:10.1002/1521-3951(200011)222:1<261::aid-pssb261>3.0.co;2-5

Cited by 19 publications

(15 citation statements)

References 89 publications

(66 reference statements)

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“…Direct quantitative measurement of Cu diffusion by for example SIMS is difficult as the concentration of Cu causing an electrical effect is most likely significantly below the detection limit of such methods. A problem that was already discussed by Istratov et al for Cu diffusion in silicon [42]. However, as the substrate-based Cu cells do not show signs of Cu diffusion there must be a thin-film related process that induces/enhances the diffusion process.…”

Section: B Characterization and Accelerated Life-time Testingmentioning

confidence: 70%

Temperature-Induced Degradation of Thin-Film III–V Solar Cells for Space Applications

Leest

Mulder

Gruginskie

et al. 2017

IEEE J. Photovoltaics

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Abstract-High efficiency, thin-film III-V solar cells offer excellent characteristics for implementation in flexible solar panels for space applications. In order to investigate the space compatibility of such cells. The temperature-induced degradation of both substrate-based cells with Au and Au/Cu contacts and thin-film cells on Au and Cu carriers was studied by accelerated ageing testing (AAT) at 200 ○ C. With less than 3% decrease in efficiency after 37 days at 200 ○ C (equivalent to 10 years at 100 ○ C for Ea = 0.70 eV) the substrate-based cells show excellent results. With a 10% decrease in efficiency after 37 days of AAT the thin-film cells on an Au carrier exhibit promising results, given the early stage of development of the thin-film cells. On the other hand severe degradation is observed for thin-film cells on a Cu carrier (decrease in efficiency > 60% after 37 days of AAT). At least two factors contribute to this severe degradation: thermally-induced stress and Cu diffusion.

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Section: B Characterization and Accelerated Life-time Testingmentioning

confidence: 70%

Temperature-Induced Degradation of Thin-Film III–V Solar Cells for Space Applications

Leest

Mulder

Gruginskie

et al. 2017

IEEE J. Photovoltaics

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“…Moreover, this layer presented good barrier properties against interdiffusion between Cu and SiO 2 , which is a crucial property for copper-based microtechnologies. [8] However, carbon (arising from the precursor ligands) trapped inside the deposited layers may be responsible for the loss of properties of the diffusion barrier layer. For instance, Koike and co-workers reported that the CVD of Mn oxide films induces the presence of an excess of inserted carbon atoms inside the layer, resulting in the progressive loss of adhesion between Cu and Mn oxide.…”

Section: Solution Layer Deposition: a Technique For The Growth Of Ultmentioning

confidence: 99%

“…Such layers can be used in microelectronics applications as a diffusion barrier layer between copper and silica. [8] A copper layer, prepared by decomposition of a copper amidinate precursor according to a previously described method, [18] has been deposited on a silica substrate functionalized with one cycle of the SLD method. After a subsequent annealing at 300 8C, no evidence for copper diffusion was observed, thus demonstrating the very efficient barrier property of our MnSiOx layer (Supporting Information, Figure S10).…”

Section: Solution Layer Deposition: a Technique For The Growth Of Ultmentioning

confidence: 99%

Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature

et al. 2016

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With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high‐purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid‐state 29Si MAS NMR, XPS, SIMS, and HRTEM.

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“…[4,5] Recently,G ordon and co-workers have developed af amily of metal-organic amidinate precursors,w hich are efficient for CVD or ALD deposition. [8] However,c arbon (arising from the precursor ligands) trapped inside the deposited layers may be responsible for the loss of properties of the diffusion barrier layer. [7] They showed that CVD of the Mn metal layer allowed formation of at hin amorphous layer of MnSi x O y on silica.…”

mentioning

confidence: 99%

“…[8] Ac opper layer, prepared by decomposition of acopper amidinate precursor according to ap reviously described method, [18] has been deposited on as ilica substrate functionalized with one cycle of the SLD method. It is noteworthy that SIMS analyses indicated the lack of carbon incorporation in the Mn oxide layer obtained by this mild solution deposition technique.Acontrolled annealing (300 8 8C) of the Mn oxide layer induces the diffusion of Mn atoms into the silica lattice, leading to afull conversion into MnSi x O y .Such layers can be used in microelectronics applications as ad iffusion barrier layer between copper and silica.…”

mentioning

confidence: 99%

Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature

et al. 2016

View full text Add to dashboard Cite

With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high-purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal-organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal-organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid-state (29) Si MAS NMR, XPS, SIMS, and HRTEM.

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Impact of the Unique Physical Properties of Copper in Silicon on Characterization of Copper Diffusion Barriers

Cited by 19 publications

References 89 publications

Temperature-Induced Degradation of Thin-Film III–V Solar Cells for Space Applications

Temperature-Induced Degradation of Thin-Film III–V Solar Cells for Space Applications

Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature

Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature

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