Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces

Allah, Mohamed Abd; Thalhammer, Robert; Kaitila, J.; Herzog, Thomas; Weber, W.; Schmitt‐Landsiedel, D.

doi:10.1016/j.sse.2010.04.031

Cited by 7 publications

(5 citation statements)

References 10 publications

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“…Based on the BAW resonators, the frequency domain response with different resonator areas in the presence of pad influence was studied. The results show that these BAW resonators have a strong area dependence on K eff 2 . By simply changing the resonant area of the resonator, the resonant frequency was changed from 3.496 GHz to 2.904 GHz, and the K eff 2 was increased from 11.97% to 43.28%.…”

Section: Introductionmentioning

confidence: 86%

“…The N77 and N78 bands cover 3300-4200 MHz and 3300-3800 MHz respectively, corresponding to relative bandwidths of 24% and 14.1%. To achieve such large bandwidths, acoustic resonators need a large K eff 2 , because filter bandwidth is mainly limited by the K eff 2 of the resonator. The AlN-based BAW resonator has a K eff 2 of only 5.8% [2], which is difficult to completely cover the N77 or N78 bands with.…”

Section: Introductionmentioning

confidence: 99%

“…To achieve such large bandwidths, acoustic resonators need a large K eff 2 , because filter bandwidth is mainly limited by the K eff 2 of the resonator. The AlN-based BAW resonator has a K eff 2 of only 5.8% [2], which is difficult to completely cover the N77 or N78 bands with. Efforts have been made to increase filter bandwidth.…”

Section: Introductionmentioning

confidence: 99%

“…The XBAR utilizes a laterally excited shear bulk acoustic wave and can reach a K eff 2 of 25% [10]. In addition to materials and modes, the K eff 2 can also be increased by the use of an inductor [11]. It is common to connect the discrete inductors to the acoustic device on the printed circuit board or integrate the coil inductors into the acoustic device package.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Area Dependence of Effective Electromechanical Coupling Coefficient Induced by On-Chip Inductance in LiNbO3-Based BAW Resonators

Shuai

Huang

et al. 2022

Electronics

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To solve the problem of filter bandwidth in 5G communication, it is urgent to develop an acoustic resonator with a large effective electromechanical coupling coefficient (Keff2). In this paper, the dependence between the resonance area and the performance of the bulk acoustic wave (BAW) resonator is studied. The solidly mounted resonators (SMRs) based on 43° Y cut lithium niobate (LN) were fabricated by the wafer transfer technique. The on-chip inductor was integrated with the BAW resonator through a pad electrode. Resonators with different resonant areas were fabricated and tested. Finite element modeling (FEM) simulation of acoustic resonators and electromagnetic (EM) simulation of layout were carried out, respectively. The Modified Butterworth Van Dyke (MBVD) model was used to analyze the results, and simulation of the Mason model was adopted. The results show that the dependency relationship between the resonant area and the effective electromechanical coupling coefficient can be induced by on-chip inductance. In the resonant area range of 20 × 20 μm2~160 × 160 μm2, the Keff2 increases from 11.97% to 43.28%.

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Section: Introductionmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Area Dependence of Effective Electromechanical Coupling Coefficient Induced by On-Chip Inductance in LiNbO3-Based BAW Resonators

Shuai

Huang

et al. 2022

Electronics

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show abstract

“…For instance, Jung et al observed a significant disparity in the FWHM values between the AlN/Mo/Si film (10.62 • ) and the AlN/Si film (3.81 • ) [29]. Abd Allah et al directly deposited AlN on silicon and prepared a solidly mounted resonator with a Q-value of 1294 [30]. Huang et al achieved the growth of high-quality AlN films on silicon by optimizing the hydrofluoric acid solution used for cleaning the Si substrate, resulting in an FWHM of 0.35 • [31].…”

Section: Introductionmentioning

confidence: 99%

A scandium doped aluminum nitride thin film bulk acoustic resonator

Gao,

Wang,

Cai

et al. 2024

J. Micromech. Microeng.

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Currently, we stand at the forefront of revolutionary advancements in communication technology. The escalating demands of advanced communication necessitate enhanced performance from materials and radio frequency (RF) devices. This paper aims to enhance film performance by depositing scandium-doped aluminum nitride (ScAlN) directly onto a Si substrate. Additionally, ScAlN was deposited on SiO2/AlN/Mo functional layers for comparison purposes. The ScAlN directly deposited on Si demonstrated superior performance in terms of crystalline quality and surface roughness, with a full width at half maximum (FWHM) of 1.7° and a roughness of 1.76 nm. Furthermore, a film bulk acoustic resonator (FBAR) based on the ScAlN film directly deposited on Si was successfully fabricated through thin-film transfer, with critical processes achieved via bonding and wet-etching of the substrate. The ScAlN in the fabricated resonator exhibited a favorable c-axis preferred orientation. The resulting ScAlN-based FBAR displayed a quality factor of 429. This study lays the groundwork for exciting opportunities in the development of higher-performance piezoelectric materials and devices.

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Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

Beșleagă

Stan

Pintilie

et al. 2016

Applied Surface Science

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Solidly mounted BAW resonators with layer-transferred AlN using sacrificial Si surfaces

Cited by 7 publications

References 10 publications

Area Dependence of Effective Electromechanical Coupling Coefficient Induced by On-Chip Inductance in LiNbO3-Based BAW Resonators

Area Dependence of Effective Electromechanical Coupling Coefficient Induced by On-Chip Inductance in LiNbO3-Based BAW Resonators

A scandium doped aluminum nitride thin film bulk acoustic resonator

Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

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