Solid-State Physics

Dornhaus, Ralf; Nimtz, G.; Richter, Wolfgang

doi:10.1007/bfb0119321

Cited by 63 publications

(49 citation statements)

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“…The only thing varied between the spectra was the position of the pump beam on the surface of the HgCdTe wafer. Using measured relationship between composition and band gap, 6 the composition gradient is estimated to be 0.03 em-1 for this sample. The major difference between the x = 0.5 samples and the x = 0.32 samples is that the bound exciton luminescence line was not seen in either of the two x = 0.32 samples studied.…”

Section: Ill Resultsmentioning

confidence: 99%

Luminescence studies of HgCdTe alloys

Hunter¹,

McGill²

1982

Journal of Vacuum Science and Technology

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We report the observation in Hg 1 _xCdx Te of band-to-band, band-to-acceptor, and donoracceptor luminescence for material of x = 0.32 and 0.5, and bound exciton recombination luminescence, for material ofx = 0.5. The band-to-band lineshape and variation in intensity with pump power are appropriate to an electron-hole plasma with recombination proceeding without wave vector conservation. Differences between the spectra among the four 0. 5 samples studied are attributed to variations in the Hg vacancy concentration. Shifts in luminescence energy across one of the x = 0.32 samples imply a change in composition across the surface of the sample of 0.03 em -

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Section: Ill Resultsmentioning

confidence: 99%

Luminescence studies of HgCdTe alloys

Hunter¹,

McGill²

1982

Journal of Vacuum Science and Technology

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“…͑ii͒ The effective mass of the carriers in materials, being connected with the mobility, is known to be one of the most important quantity used for the analysis of the nanodevices under different physical conditions. 84 It must be noted that among the various definitions of the effective electron mass, 85 it is the momentum effective mass that should be regarded as the basic quantity. 86 This is due to the fact that it is this mass which appears in the description of transport phenomena and all other properties of the conduction electrons in a band with arbitrary band nonparabolicity.…”

Section: G Six Applications Of the Results Of This Paper In The Fielmentioning

confidence: 99%

The Einstein relation in quantum wires of III-V, ternary, and quaternary materials in the presence of light waves: Simplified theory, relative comparison, and suggestion for experimental determination

Ghatak

Bhattacharya

Bhowmik

et al. 2008

Journal of Applied Physics

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We study the Einstein relation for the diffusivity to mobility ratio ͑DMR͒ in quantum wires ͑QWs͒ of III-V, ternary, and quaternary materials in the presence of light waves, whose unperturbed energy band structures are defined by the three band model of Kane. It has been found, taking n-InAs, n-InSb, n-Hg 1−x Cd x Te, n-In 1−x Ga x As y P 1−y lattice matched to InP as examples, that the respective DMRs exhibit decreasing quantum step dependence with the increasing film thickness, decreasing electron statistics, increasing light intensity and wavelength, with different numerical values. The nature of the variations is totally band structure dependent and is influenced by the presence of the different energy band constants. The strong dependence of the DMR on both the light intensity and the wavelength reflects the direct signature of the light waves which is in contrast as compared to the corresponding QWs of the said materials in the absence of photoexcitation. The classical equation of the DMR in the absence of any field has been obtained as a special case of the present analysis under certain limiting conditions and this is the indirect test of the generalized formalism. We have suggested an experimental method of determining the DMR in QWs of degenerate materials having arbitrary dispersion laws and our results find six applications in the field of quantum effect devices.

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“…These techniques include liquid-phase epitaxy (LPE) and vapor phase epitaxy (VPE) growth systems [32] which are used to synthesize GaAs and other similar materials. These techniques have been prominent in the development of thin, uniform heteroepitaxial layers required for a electrooptical devices in optical communication systems [33], and the realization of high quality growth techniques are a major reason for the emerging impact of III-V semiconductors in a variety of electronic device applications.…”

Section: Introductionmentioning

confidence: 99%

Molecular Beam Epitaxial Growth of Hg(1-x)CdxTe

Moazed¹

1980

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Solid-State Physics

Cited by 63 publications

References 0 publications

Luminescence studies of HgCdTe alloys

Luminescence studies of HgCdTe alloys

The Einstein relation in quantum wires of III-V, ternary, and quaternary materials in the presence of light waves: Simplified theory, relative comparison, and suggestion for experimental determination

Molecular Beam Epitaxial Growth of Hg(1-x)CdxTe

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