Solid-State Devices Other than Semiconductors

Lax, B.; Mavroides, J. G.

doi:10.1109/jrproc.1962.288003

Cited by 1 publication

(1 citation statement)

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“…The interactions with high-energy phonons (of representation S, [19]) and carrier-carrier collisions are to be discussed here, while the intervally scattering on ionized donors [20] can be neglected for Si as follows from the transition probability (estimation with the values of the parameters taken from [21]). -As the shape of the distribution functions f f ) is known (Section 3.1) it has become possible to treat f-scattering without limiting to spherical energy surfaces.…”

Section: Influence Of F-scatteringmentioning

confidence: 99%

Influence of electron‐electron scattering on the anisotropic conductivity at high electric fields in Si

Asche¹,

Boichenko²,

Бондар

et al. 1971

Physica Status Solidi (b)

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), B. L. BOICHENKO (b), V. M. BONDAR (a), and 0. G. SARBEI (a) The conductivity and its anisotropy were investigated in dependence on the electric field strength in a wide range of impurity density for n-Si at 77 OK. It is shown that the intervalley transfer of electron energy on account of electron-lectron interaction has to be included for carrier densities above 1Ol6 cm-S in order to achieve a satisfactory description of the results obtained experimentally. Mayqe~a npoBonmocTb EI ee ~H E I~O T P O~E I I IB KpHcTannax n-Si n p~ 77 OK B 3aBUCHMOCTH OT 3JIeKTPHWCKOrO ll0nII B nulpOKOfi obnac~a KOHUeHTpaUHII npHMeCefi. nOKa3aH0, ¶TO &llH ynOBSIeTBOpHTeJIbHOr0 OIIHCaHAII 3KCllepIIMeHTaJlbHbIX pe3yJlbTaTOB HeO6XOnIIM Y ¶0T MeNnynOJlHHHOfi IIepeAaWl3HeprEIH3a C q e T 3JIeKTPOH-3JIeKTpOHHOI'O B3aMMOneikTBEifI IIpH KOHUeHTpaUURX 3JIeKTpOHOB 10'' CM-8 II BbIIIIe.

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Section: Influence Of F-scatteringmentioning

confidence: 99%