), B. L. BOICHENKO (b), V. M. BONDAR (a), and 0. G. SARBEI (a) The conductivity and its anisotropy were investigated in dependence on the electric field strength in a wide range of impurity density for n-Si at 77 OK. It is shown that the intervalley transfer of electron energy on account of electron-lectron interaction has to be included for carrier densities above 1Ol6 cm-S in order to achieve a satisfactory description of the results obtained experimentally.
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