Influence of electron‐electron scattering on the anisotropic conductivity at high electric fields in Si

Abstract

), B. L. BOICHENKO (b), V. M. BONDAR (a), and 0. G. SARBEI (a) The conductivity and its anisotropy were investigated in dependence on the electric field strength in a wide range of impurity density for n-Si at 77 OK. It is shown that the intervalley transfer of electron energy on account of electron-lectron interaction has to be included for carrier densities above 1Ol6 cm-S in order to achieve a satisfactory description of the results obtained experimentally. Mayqe~a npoBonmocTb EI ee ~H E I~O T P O~E I I IB KpHcTannax n-Si n p~ 77 OK B 3aBUCHMOCTH OT 3JIeKTPHWCKOrO ll0nII B nulpOKOfi obnac~a KOHUeHTpaUHII npHMeCefi. nOKa3aH0, ¶TO &llH ynOBSIeTBOpHTeJIbHOr0 OIIHCaHAII 3KCllepIIMeHTaJlbHbIX pe3yJlbTaTOB HeO6XOnIIM Y ¶0T MeNnynOJlHHHOfi IIepeAaWl3HeprEIH3a C q e T 3JIeKTPOH-3JIeKTpOHHOI'O B3aMMOneikTBEifI IIpH KOHUeHTpaUURX 3JIeKTpOHOB 10'' CM-8 II BbIIIIe.

Self-induced birefringence of infrared light inn-Ge

“…These values yield equivalent dc fields of 4600 and 860 V/cm, respectively. It should be mentioned that the carrier redistribution between the valleys is a function of the carrier density, because it strongly diminishes with increasing electron-electron interaction [12]. Consequently, for 5 x 10 16 cm -3 this effect is important for 80 K and only weakly pronounced for 300 K. As there are only data published for purer samples such results [13] agree with our value for 300 K, but yield a significant higher one [14] for 80 K as expected.…”

Electric Conductivity of Hot Carriers in Si and Ge

“…25 [99]. I n the region of field strengths covered by t hese measurements (some hundred Vjcm) the neglection of carrier-carrier interaction for h ( x ) and the departure of fo(x) from a Maxn ellian shape a t highenergies play inferior roles for this analysis compared with the extended field strength range under consideration for the longitudinal anisotropy.…”