Electric Conductivity of Hot Carriers in Si and Ge

Asche, M.; Sarbei, O. G.

doi:10.1002/pssb.19690330102

Cited by 54 publications

(4 citation statements)

References 131 publications

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“…In numerous works, reported are the expressions for the average rate of energy losses due to the electrons scattering by the acoustic and optical phonons. We used such expressions in the form given in [11]. The energy exchange between electrons of different valleys at their collisions was calculated by the formulae presented in [10].…”

Section: Introductionmentioning

confidence: 99%

Anisotropy and non-linearity of absorption of intensive IR light by free electrons in germanium

Vasetskii¹

2005

Semicond. phys. quantum electron. optoelectron.

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Section: Introductionmentioning

confidence: 99%

Anisotropy and non-linearity of absorption of intensive IR light by free electrons in germanium

Vasetskii¹

2005

Semicond. phys. quantum electron. optoelectron.

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“…Although scattering by the interaction of an electron with one phonon (1ph) has typically been employed in theoretical and Monte Carlo studies at low field and in the warm electron regime to interpret transport studies, [29,[32][33][34][35] other experiments suggest a nonnegligible role for higher-order processes [36][37][38][39]. In Si, two-phonon (2ph) deformation potentials were extracted from second-order Raman spectra [40,41], and calculations of charge transport properties based on these values have indicated that 2ph scattering may make a non-negligible contribution to scattering rates [42][43][44].…”

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confidence: 99%

Two-phonon scattering in non-polar semiconductors: a first-principles study of warm electron transport in Si

Hatanpää¹,

Choi²,

Cheng³

et al. 2022

Preprint

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The ab-initio theory of charge transport in semiconductors typically employs the lowest-order perturbation theory in which electrons interact with one phonon (1ph). This theory is accepted to be adequate to explain the low-field mobility of non-polar semiconductors but has not been tested extensively beyond the low-field regime. Here, we report first-principles calculations of the electric field-dependence of the electron mobility of Si as described by the warm electron coefficient, β.Although the 1ph theory overestimates the low-field mobility by only around 20%, it overestimates β by over a factor of two over a range of temperatures and crystallographic axes. We show that the discrepancy in β is reconciled by inclusion of on-shell iterated 2-phonon (2ph) scattering processes, indicating that scattering from higher-order electron-phonon interactions is non-negligible even in non-polar semiconductors. Further, a ∼ 20% underestimate of the low-field mobility with 2ph scattering suggests that non-trivial cancellations may occur in the perturbative expansion of the electron-phonon interaction.

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“…We believe that these results will stimulate further measurements of anisotropy and microscopical calculations of nonsymmetric defects. Beside this, a nonequivalent heating of carriers in different valleys (and an intervalley redistribution of carriers) by a strong electric field takes place under an essential anisotropy of scattering (in analogy with the bulk case [13]). I am grateful to E. I. Karp for a useful comment.…”

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confidence: 99%

Anisotropic conductivity of doped graphene due to short-range nonsymmetric scattering

Vasko

2010

Applied Physics Letters

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The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetric defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the anisotropic conductivity tensor are based on the quasiclassical kinetic equation for the case of monopolar transport at low temperatures. The effective longitudinal conductivity and the transverse voltage, which are controlled by orientation of sample and by gate voltage (i.e. doping level), are presented.

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Electric Conductivity of Hot Carriers in Si and Ge

Cited by 54 publications

References 131 publications

Anisotropy and non-linearity of absorption of intensive IR light by free electrons in germanium

Anisotropy and non-linearity of absorption of intensive IR light by free electrons in germanium

Two-phonon scattering in non-polar semiconductors: a first-principles study of warm electron transport in Si

Anisotropic conductivity of doped graphene due to short-range nonsymmetric scattering

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