Anisotropic conductivity of doped graphene due to short-range nonsymmetric scattering

Abstract

The conductivity of doped graphene is considered taking into account scattering by short-range nonsymmetric defects, when the longitudinal and transverse components of conductivity tensor appear to be different. The calculations of the anisotropic conductivity tensor are based on the quasiclassical kinetic equation for the case of monopolar transport at low temperatures. The effective longitudinal conductivity and the transverse voltage, which are controlled by orientation of sample and by gate voltage (i.e. doping level), are presented.

Anisotropic dynamics of charge carriers in graphene

“…As graphene is a zero gap semiconductor, under the widely used experimental conditions, when large contact area electrodes are used, and the angle of incidence of the wave packets on the interface can vary over a certain range, lower energy spreading states are likely to tunnel, too. An anisotropic conductivity may also appear in conventional transport experiments, however, at energies close to the Fermi energy, because the effect of short-range nonsymmetric defects 33 or because the Rashba spin-orbit coupling 34 caused by impurities 35 or by the interaction with the support surface. 36 A very important factor that may affect the propagation of charge carriers 37,38 in graphene is the presence of grain boundaries.…”

Micro- and nano-patterned conductive graphene–PEG hybrid scaffolds for cardiac tissue engineering

“…The ability for defects to have a significant negative impact on graphene’s conductive properties is well established 10 . Furthermore, previous work has shown that short-range nonsymmetric defects in graphene can give rise to orientation-dependent conductivity 11 . Given that the majority of cracks appeared to form within the grooves, it seems plausible that conductivity along the ridges was largely unaffected, explaining the high conductivity measurements recorded in that orientation.…”