Solid state devices based on thin films of Cu2O show a new type of I?V relations

Rosenstock, Zvi; Feldman, Irena; Riess, I.

doi:10.1016/j.ssi.2004.03.049

Cited by 16 publications

(11 citation statements)

References 13 publications

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“…We now present experimental results of I e −V measurements on the MIEC Cu 2 O placed between two ion blocking electrodes, done at room temperatures. The experimental and theoretical details are given elsewhere [9,17,18]. The I e −V results are exhibited in Fig.…”

Section: Experimental I E −V Relations For Cu 2 O Placed Between Two mentioning

confidence: 99%

I−V relations in semiconductors with ionic motion

Riess

2006

J Electroceram

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Semiconductors with mobile donors and acceptors are mixed-ionic-electronic-conductors, MIECs, which exhibit peculiar electronic (electron/hole), I e , current-voltage relations. This is a result of the redistribution of the ions under the applied electrical potential. MIECs are usually ionic materials which exhibit relative low electron/hole mobilities as compared to the materials used in the semiconductor industry. However, thin layers of MIECs exhibit a low resistance and fast response and become of increasing interest.The I e −V relations are discussed for a few typical examples. It is shown that they depend on the energy band gap as when it is large, the semiconductor is either p-type or n-type. The I e −V relations depend also on the nature of the electrodes, whether blocking for ion exchange or not. Experimental results for Cu 2 O are presented and analyzed using one of the models discussed.

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Section: Experimental I E −V Relations For Cu 2 O Placed Between Two mentioning

confidence: 99%

I−V relations in semiconductors with ionic motion

Riess

2006

J Electroceram

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“…A similar behavior is found in series C, but with some slightly hysteresis effects. These behaviors suggest that during these measurements the sample had a low ionic mobility that did not lead to an important ionic redistribution on the time scale of measurements [5,16]. Anyway, it should be noted that I(t) exhibits a great diversity of shapes, therefore indicating that ion motion is taking place.…”

Section: Temporal Variation Of Current Intensitymentioning

confidence: 86%

“…Anyway, it should be noted that I(t) exhibits a great diversity of shapes, therefore indicating that ion motion is taking place. On the contrary, in series B, the I-V relation is non-linear and shows a curve similar to an asymmetrical skewed tanh, suggesting that the sample had a high ionic mobility during series B measurements, in such a way that ions had time to be redistributed on the time scale of measurements [5,16,17]. Likewise, more pronounced hysteresis effects are observed, indicating that a steady state has not been completely reached [3].…”

Section: Temporal Variation Of Current Intensitymentioning

confidence: 99%

“…In this compound, in addition to holes, Cu ions also take part in conduction [1,2]. Cu 2 O was reported to show a special type of I-V relations due to such motion [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…The existence of the DADP permits the Cu and In Cu 2+ motion through Cu vacant sites. AB n−3 -III n+1 -VI 2n compounds with n=4, 5,6,7,8,9 can be formed with a very similar structure and different number of DADPs depending on the n value [10]. In nanoscale MIECs with low ionic motion, new I-V relations under a slowly varying applied voltage may appear due to the ion motion [6].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The interface effect on the I–V curves and analysis of ionic diffusion coefficients of polycrystalline CuIn4Te6

Arranz

Dı́az

2013

Solid State Ionics

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Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

et al. 2015

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Nanocrystalline of Cu 2 O thin film was synthesized by sol-gel spin-coating technique. The spectrophotometric characteristics of transmission and reflection were studied for the film deposited on glass substrate. The optical absorption measurements near the absorption edge indicate that the absorption mechanism is due to allowed direct transition with energy gap value of 2.09 eV. The current-voltage characteristics of Al/Cu 2 O/p-Si/Al diode were studied under dark and various light intensities in the range 20-100 mW/cm 2 . The main diode parameters such as barrier height, ideality factor, series resistance were calculated from the analysis of current-voltage characteristics and studied under various illumination intensities. Moreover, the results indicate that the diode has a high photoresponsivity and the photocurrent increases with increasing light intensity which supports the availability of the diode for photosensor applications. The capacitance and conductance characteristics indicate that the diode highly depends on both voltage and frequency. Higher increase in the capacitance under low frequency as well as the presence of a characteristic peak in the capacitancefrequency characteristics indicates the presence of interface states. Moreover, the stronger parameters of the diode performance such as series resistance and interface states were extracted from the capacitance-voltage-frequency and conductance-voltage-frequency characteristics.

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Solid state devices based on thin films of Cu2O show a new type of I?V relations

Cited by 16 publications

References 13 publications

I−V relations in semiconductors with ionic motion

I−V relations in semiconductors with ionic motion

The interface effect on the I–V curves and analysis of ionic diffusion coefficients of polycrystalline CuIn4Te6

Nanocrystalline Cu2O/p-Si solar light-responsive Schottky photodiode

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