Semi-conductors with mobile acceptors or donors show a new type of I-V relations. This paper presents experimental results for solid state devices based on copper oxide, found to be Cu 2 O, which exhibit these I-V relations. The cells examined are Cu|Cu 2 O|In and Cu|Cu 2 O|Ag and similar ones tested at room temperature. The measured I-V relations are different from those reported for the same type of cells in the past, which were explained to be fixed by a Schottky barrier Cu|Cu 2 O. We find that the I-V relations relax over a long time which we claim is due to ion redistribution. The new I-V relations can then be explained by assuming that Cu 2 O is a mixed-ionicelectronic-conductor and adopting a theory developed by us in the past and modified to be applicable to the relevant defect model here. In this case the contribution of Schottky barriers is insignificant.

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