I−V relations in semiconductors with ionic motion

Abstract

Semiconductors with mobile donors and acceptors are mixed-ionic-electronic-conductors, MIECs, which exhibit peculiar electronic (electron/hole), I e , current-voltage relations. This is a result of the redistribution of the ions under the applied electrical potential. MIECs are usually ionic materials which exhibit relative low electron/hole mobilities as compared to the materials used in the semiconductor industry. However, thin layers of MIECs exhibit a low resistance and fast response and become of increasing interest.The I e −V relations are discussed for a few typical examples. It is shown that they depend on the energy band gap as when it is large, the semiconductor is either p-type or n-type. The I e −V relations depend also on the nature of the electrodes, whether blocking for ion exchange or not. Experimental results for Cu 2 O are presented and analyzed using one of the models discussed.

Sub-nA spatially resolved conductivity profiling of surface and interface defects in ceria films

“…14,15,23,24 We note that while classical I-V analyses for mixed electronic-ionic conductors were developed for the uniform field case, their predictions are expected to be qualitatively correct in the case of a localized probe. Furthermore, in certain cases, the transport equations derived for a uniform field can be used directly, with the probe-surface contact radius becoming the relevant length scale and substituting, for example, for sample thickness.…”

Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1−xMnO3 interface

“…51 Note that this model, while mathematically complex, presents the simplest possible description for coupled polarization-mobile carrier problem, similar to earlier studies in the fields of ferroelectricsemiconductors [52][53][54][55] and mixed electronic-ionic conductors. 56,57 Once available, such model allows relevant materials parameters to be established within the postulated physical model as derived from experimental observations. Out-of-plane lattice constant ( ) z x c , is shown in Figure. We demonstrate charge-induced interface reconstruction in the ferroelectric (BFO)/metallic ferromagnetic (LSMO) thin film structure and elucidate the atomic-scale mechanism responsible for the polarization induced by the field effect, offering a new paradigm for interface-based magnetoelectric and spintronic devices.…”

Silver(I)-(poly)chalcogenide Halides – Ion and Electron High Potentials

“…A significantly different structural behaviour was found for the Ag 19 6 Br 7 (c = 2). In the case of the iodide and selenide substitution completely different compounds with new crystal structures were found at higher grades of substitution.…”

“…During the past 25 years the understanding of electronic properties, defect chemistry and physics of mixed conductors were studied [5,6] leading to a fundamental understanding of the transport phenomena. The variety of compounds is not only restricted to crystalline materials, glasses or polymers are also of general interest.…”