2018
DOI: 10.3390/ma11122483
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Solid-Liquid Interdiffusion (SLID) Bonding of p-Type Skutterudite Thermoelectric Material Using Al-Ni Interlayers

Abstract: Over the past few years, significant progress towards implementation of environmentally sustainable and cost-effective thermoelectric power generation has been made. However, the reliability and high-temperature stability challenges of incorporating thermoelectric materials into modules still represent a key bottleneck. Here, we demonstrate an implementation of the Solid-Liquid Interdiffusion technique used for bonding Mmy(Fe,Co)4Sb12 p-type thermoelectric material to metallic interconnect using a novel alumin… Show more

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Cited by 10 publications
(7 citation statements)
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References 39 publications
(43 reference statements)
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“…CoSb 3 -based filled skutterudites are considered as one kind of the most promising mid-temperature TE materials not only due to their good TE performance but also due to their low cost, high mechanical strength, and high thermal stability. , Hence, CoSb 3 -based filled skutterudites are popular for fabricating TE devices. ,, However, CoSb 3 -based TE materials can also have great interdiffusion or chemical reaction with most of the metal and alloy electrodes in the high-temperature range. ,, Therefore, the optimization of diffusion barrier materials is significant for CoSb 3 -based TE devices. As shown in previous reports, many metals and alloys have been used as diffusion barrier materials for CoSb 3 -based TE joints, such as Ti, , Ni, Co, Mo, Nb, Ti–Al alloys, , Al–Ni alloys, TaN–Ta–TaN alloys, Fe–Ni alloys, Ti–Mo alloys, and Co–Mo alloys . Among these diffusion barrier materials shown above, Ti and Ti-based alloys have been demonstrated as good candidates for the diffusion barrier materials of CoSb 3 -based TE joints. ,,,, Gu et al used the Ti–Al alloy as a barrier layer for n-type Yb 0.6 Co 4 Sb 12 TE materials, revealing that the intermetallic compounds of Ti 3 Al and TiAl formed in Ti–Al alloys can effectively hinder further interfacial diffusion.…”
Section: Introductionmentioning
confidence: 80%
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“…CoSb 3 -based filled skutterudites are considered as one kind of the most promising mid-temperature TE materials not only due to their good TE performance but also due to their low cost, high mechanical strength, and high thermal stability. , Hence, CoSb 3 -based filled skutterudites are popular for fabricating TE devices. ,, However, CoSb 3 -based TE materials can also have great interdiffusion or chemical reaction with most of the metal and alloy electrodes in the high-temperature range. ,, Therefore, the optimization of diffusion barrier materials is significant for CoSb 3 -based TE devices. As shown in previous reports, many metals and alloys have been used as diffusion barrier materials for CoSb 3 -based TE joints, such as Ti, , Ni, Co, Mo, Nb, Ti–Al alloys, , Al–Ni alloys, TaN–Ta–TaN alloys, Fe–Ni alloys, Ti–Mo alloys, and Co–Mo alloys . Among these diffusion barrier materials shown above, Ti and Ti-based alloys have been demonstrated as good candidates for the diffusion barrier materials of CoSb 3 -based TE joints. ,,,, Gu et al used the Ti–Al alloy as a barrier layer for n-type Yb 0.6 Co 4 Sb 12 TE materials, revealing that the intermetallic compounds of Ti 3 Al and TiAl formed in Ti–Al alloys can effectively hinder further interfacial diffusion.…”
Section: Introductionmentioning
confidence: 80%
“…6,27,28 Therefore, the optimization of diffusion barrier materials is significant for CoSb 3 -based TE devices. As shown in previous reports, many metals and alloys have been used as diffusion barrier materials for CoSb 3 -based TE joints, such as Ti, 17,29−31 Ni, 31 Co, 31 Mo, 32 Nb, 18 Ti−Al alloys, 27,33 Al−Ni alloys, 34 TaN−Ta−TaN alloys, 35 Fe−Ni alloys, 23 Ti−Mo alloys, 28 and Co−Mo alloys. 36 Among these diffusion barrier materials shown above, Ti and Ti-based alloys have been demonstrated as good candidates for the diffusion barrier materials of CoSb 3 -based TE joints.…”
Section: Introductionmentioning
confidence: 87%
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“…The diameter of the so obtained pseudo-spherical specimens ([ = 1.9-2.1 mm) was measured and these balls were embedded into the skutterudite matrixes via hot-pressing (56 MPa, 600°C, 2 h in 5 N Ar employing a uniaxial hot press Fig. 1 [36] B (Mo-Ti), [29] C (Ag-Pd), [34] D (Mo-Ti), [31,35] E (Al-Ti), [7,[37][38][39] F (Fe-Ni), [40] G (Al-Ni) [41] W200/250-2200-200-KS). The tablets with a diameter of 10 mm were vacuum-sealed in quartz tubes and heattreated at 600°C for 1100 h. The annealed cylinders were ground to the appearance of the embedded balls, and then polished using standard procedures.…”
Section: Methodsmentioning
confidence: 99%
“…[10] Moreover, brazing further entails the risks of thermal cracking and interfacial diffusion because the high operating temperature of the brazing process is usually the melting temperature of these TE materials. [13,14] Thus, various methods have been developed to solve this problem in the manufacturing of medium-or high-temperature thermoelectric modules. Weinstein et al adopted spark plasma sintering (SPS) to join a medium temperature PbTe element with an Fe electrode.…”
mentioning
confidence: 99%