The filled skutterudite CeOs4Sb12 and its nonmagnetic analogue LaOs4Sb12 have been synthesized in single-crystal form using the molten-metal-flux growth technique with Sb flux. Electrical resistivity measurements on CeOs4Sb12 indicate that it is a Kondo insulator with an energy gap of ΔE/kB~10 K. Lattice parameter and magnetic susceptibility measurements suggest that the Ce ions are trivalent in CeOs4Sb12. Specific heat and magnetization measurements reveal an enhanced value of the electronic specific heat coefficient γ~92 mJ mol-1 K-2 and Pauli susceptibility, reminiscent of a moderately heavy-fermion material.

We report measurements of the magnetic penetration depth lambda(T) in high-quality CePt3Si samples down to 0.049 K. We observe a linear temperature dependence below T approximately equal to 0.16Tc, which is interpreted as evidence for line nodes in the energy gap of the low-temperature phase of this material. A kink in lambda(T) at about 0.53 K may be associated with the second superconducting transition recently reported. The results are discussed in terms of the symmetry of the superconducting order parameter.

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We report on novel antiferromagnetic (AFM) and superconducting (SC) properties of noncentrosymmetric CePt3Si through measurements of the 195Pt nuclear spin-lattice relaxation rate 1/T(1). In the normal state, the temperature (T) dependence of 1/T(1) unraveled the existence of low-lying levels in crystal-electric-field multiplets and the formation of a heavy-fermion (HF) state. The coexistence of AFM and SC phases that emerge at T(N)=2.2 K and T(c)=0.75 K, respectively, takes place on a microscopic level. CePt3Si is the first HF superconductor that reveals a peak in 1/T(1) just below T(c) and, additionally, does not follow the T3 law that used to be reported for most unconventional HF superconductors. We remark that this unexpected SC characteristic may be related to the lack of an inversion center in its crystal structure.

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At present the only surface electron microscope which allows true characteristic XPEEM (photoemission electron microscopy using synchrotron radiation) and structural characterization is the spectroscopic LEEM developed at the Technical University Clausthal in the early nineties. This instrument has in the past been used mainly for LEEM studies of various surface and thin film phenomena, because it had very limited access to synchrotron radiation. Now the microscope is connected quasipermanently to the undulator beamline 6.2 at the storage ring ELETTRA, operating successfully since the end of 1996 under the name SPELEEM (Spectroscopic PhotoEmission and Low Energy Electron Microscope). The high brightness of the ELETTRA light source, together with an optimized instrument, results in a spatial resolution better than 25 nm and an energy resolution better than 0.5 eV in the XPEEM mode. The instrument can be used alternately for XPEEM, LEEM, LEED (low energy electron diffraction), MEM (mirror electron microscopy) and other imaging modes, depending upon the particular problem studied. The combination of these imaging modes allows a comprehensive characterization of the specimen. This is of particular importance when the chemical identification of structural features is necessary for the understanding of a surface or thin film process. In addition, PED (photoelectron diffraction) and VPEAD (valence photoelectron angular distribution) of small selected areas give local atomic configuration and band structure information, respectively.