Solar cells with porous silicon: modification of surface-recombination velocity

Improved Performance and Spectral Features of Complex Porous Silicon Structure Containing Silicon Solar Cells

“…Thus, photons take on a more favorable opportunity to participate in creating energy of the solar cell. Please note that this conclusion is compatible with results concerning reduction of surface recombination in porous silicon published in following papers [8].…”

“…It is thought that porous silicon layer may reduce the recombination rate of surface as well. It is based on analysis of a model involving carrier diusion from the surface and recombination at the surface and in the bulk of the emitter [8]. Further review of previous work can be found in the papers [4,9,10].…”

Front buried metallic contacts and thin porous silicon combination for efficient polycrystalline silicon solar cells

“…After PS application a significant enhancement of the I sc was observed, which reaches a value of 24 mA/cm 2 . This was attributed to the antireflection action and to the light diffusing nature of the PS layer [3] as well as to the low surface recombination velocity as a result of PS passivation [5]. Indeed, the CVE based PS is rich in passivating Si-Hx species (Fig.…”

“…Several experiments showed that the characteristics of silicon solar cells can be improved by coating the n + emitter region with PS [1,2]; this was attributed to the structural and optical properties of PS that lead to good electrical passivation and low surface recombination velocity [3][4][5]. The recombination velocity at the front side of a non passivated single crystal silicon surface is in the range of 10 5 -10 6 cm/s, while it is about 10 2 -10 3 cm/s for the passivated one [6].…”

Control Over the Performance of Monocrystalline Silicon Solar Cells Referring to the Porous Silicon Layer / Monokristalinio Silicio Saulės Elementų Charakteristikų Valdymas Akytojo Silicio Sluoksniu

“…Pagaminus akytojo silicio sluoksnį, saulės energijos konversija silicio saulės elemente padidėjo 21-28 %, lyginant su pradine verte, absoliuti vertė siekė iki 11 %. Kitame darbe parodyta, kad akytojo silicio sluoksnis saulės elemento paviršiuje gali veikti kaip paviršiaus rekombinacijos greičio mažinimo elementas (Kopitkovas et al 2001). Vėlesniuose darbuose taip pat aprašytos akytojo silicio taikymo sritys mažinant šviesos atspindį saulės elementuose (Striemer, Fauchet 2002;Lipinski et al 2002).…”