Solar cells with gallium phosphide/silicon heterojunction

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, M.; Baron, T.; Muñoz, D.

doi:10.1063/1.4931514

Cited by 8 publications

(2 citation statements)

References 18 publications

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“…Once the q mesh is dense enough to correctly describe this divergence (66 × 66 × 66 mesh), the DG results are very similar to a full computation taking into account the variation of the e-ph matrix elements on a q mesh twice as dense as the k mesh (red crosses). There are few experimental data for the electron mobility in GaP with values between 200 and 330 cm 2 V −1 s −1 [78] but experiments are usually performed on polycrystalline samples. A more accurate description of transport properties in GaP would therefore require the inclusion of grain-boundary scattering effects that are beyond the scope of the present work.…”

Section: Phonon-limited Mobilitymentioning

confidence: 99%

Phonon-limited electron mobility in Si, GaAs, and GaP with exact treatment of dynamical quadrupoles

et al. 2020

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We describe a new approach to compute the electron-phonon self-energy and carrier mobilities in semiconductors. Our implementation does not require a localized basis set to interpolate the electron-phonon matrix elements, with the advantage that computations can be easily automated. Scattering potentials are interpolated on dense q meshes using Fourier transforms and ab initio models to describe the long-range potentials generated by dipoles and quadrupoles. To reduce significantly the computational cost, we take advantage of crystal symmetries and employ the linear tetrahedron method and double-grid integration schemes, in conjunction with filtering techniques in the Brillouin zone. We report results for the electron mobility in Si, GaAs, and GaP obtained with this new methodology.

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Section: Phonon-limited Mobilitymentioning

confidence: 99%

Phonon-limited electron mobility in Si, GaAs, and GaP with exact treatment of dynamical quadrupoles

et al. 2020

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“…GaP possesses several attractive properties suited to electron‐selective contacts in silicon solar cells: a small conduction‐band offset, demonstrated high n‐type doping and conductivity, and even a small lattice mismatch (with [100] silicon), which introduces the possibility of epitaxial growth. Nevertheless, experimental demonstrations of GaP‐contacted Si devices fall short of the promising simulations 358–363 . A crucial limitation of this approach is the classical use of MOCVD or molecular‐beam epitaxy (MBE) to grow GaP, which is not standard for Si‐cell processing.…”

Section: Other Metal Compoundsmentioning

confidence: 99%

Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

Michel

Dréon

Boccard

et al. 2022

Progress in Photovoltaics

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Solar cells rely on the efficient generation of electrons and holes and the subsequent collection of these photoexcited charge carriers at spatially separated electrodes.High wafer quality is now commonplace for crystalline silicon (c-Si) based solar cells, meaning that the cell's efficiency potential is largely dictated by the effectiveness of its carrier-selective contacts. The majority of contacts currently employed in industrial production are based on highly doped-silicon, which can introduce negative side-effects including Auger recombination or parasitic absorption depending on whether the dopants are diffused into the absorber or whether they are incorporated into silicon layers deposited outside the absorber. Given the terawatt scale of deployment of c-Si solar cells, the search for alternative contacting schemes that can offer potential benefits in terms of performance, cost, ease of processing or stability is highly relevant. One such category of contacting schemes, with the potential to avoid the above mentioned issues, is that which employs metal compounds as the 'carrierselective' layer. The last 7 years has seen a surge in interest on this topic and a few promising families of materials have emerged, most prominently the alkali/alkalineearth metal compounds and the transition-metal oxides. The number of successful selective-contact demonstrations of materials within these families is fast increasing with the best solar cell demonstrations now exceeding 23%. However, in addition to improving their efficiency performance, several challenges remain if such contacts are to be considered for industrial adoption. These are mainly associated with poor stability, lack of compatibility with transparent electrodes and inability to be deposited using standard industrial techniques. This review covers the historical developments, current status and future prospects of metal-compound based selective contacts in the context of c-Si photovoltaics.

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