2020
DOI: 10.1103/physrevb.102.094308
|View full text |Cite
|
Sign up to set email alerts
|

Phonon-limited electron mobility in Si, GaAs, and GaP with exact treatment of dynamical quadrupoles

Abstract: We describe a new approach to compute the electron-phonon self-energy and carrier mobilities in semiconductors. Our implementation does not require a localized basis set to interpolate the electron-phonon matrix elements, with the advantage that computations can be easily automated. Scattering potentials are interpolated on dense q meshes using Fourier transforms and ab initio models to describe the long-range potentials generated by dipoles and quadrupoles. To reduce significantly the computational cost, we t… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

4
97
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
8
1

Relationship

2
7

Authors

Journals

citations
Cited by 67 publications
(101 citation statements)
references
References 87 publications
(184 reference statements)
4
97
0
Order By: Relevance
“…[14,15]. For lightly doped semiconductors, the current state of the art is the full wave vector dependent solution of Boltzmann's equation [16][17][18], using an electron-phonon coupling (EPC) scattering kernel calculated from first principles and making an effective relaxation time approximation: Each electron state has a single averaged scattering time, in the mean field of all other electrons in equilibrium. This approach has only started to be applied to transport in metals recently [19][20][21], in part because most metal Fermi surfaces are much larger than the pockets found in lightly doped semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…[14,15]. For lightly doped semiconductors, the current state of the art is the full wave vector dependent solution of Boltzmann's equation [16][17][18], using an electron-phonon coupling (EPC) scattering kernel calculated from first principles and making an effective relaxation time approximation: Each electron state has a single averaged scattering time, in the mean field of all other electrons in equilibrium. This approach has only started to be applied to transport in metals recently [19][20][21], in part because most metal Fermi surfaces are much larger than the pockets found in lightly doped semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…Note added.-Recently, we became aware of a related work by another group that reaches similar conclusions about the importance of the dynamical quadrupole term to obtain an accurate physical description of e-ph interactions [25,26].…”
mentioning
confidence: 84%
“…Yet, DFPT is too costly to use directly on the ultrafine Brillouin zone grids needed to compute e-ph relaxation times and charge transport using the BTE. The current approach relies on Fourier interpolation techniques to capture the short-range e-ph interactions [23][24][25][26] while adding the dipole Fröhlich term in reciprocal space for polar materials. Deriving and computing the Fröhlich interaction [27,28] has been a first step toward implementing Vogl's modern e-ph theory in firstprinciples calculations and correctly capturing the longrange e-ph contributions.…”
mentioning
confidence: 99%
“…Recent work has applied this approach to compute the transport behavior of large numbers of materials, including 48,000 semiconductors in the Materials Project database by Ricci et al 27 , 809 sulfides by Miyata et al 28 , and 75 potential thermoelectric candidates by Xing et al 29 ; however, the unphysical treatment of electron scattering and the reliance on an empirical tuning parameter often results in significant errors. (iii) Finally, the fully first principles approach to calculating the electron-phonon interaction based on density functional perturbation theory (DFPT) combined with Wannier interpolation can now yield highly accurate electron lifetimes and have demonstrated remarkable agreement to experimental measurements of electron mobility and conductivity [30][31][32][33][34][35] . The calculation of the scattering matrix elements needed to obtain electron lifetimes is highly computationally demanding, even when approximations are made.…”
mentioning
confidence: 99%