Dedicated to Prof. Ignazio L. Fragalà on the occasion of his 60th BirthdayThe capability of ªsecond-generationº precursors to act as a solvent of other precursor species, thus yielding a molten multicomponent source, has been investigated in detail. In particular, this novel approach has been applied to the MOCVD process of high quality, epitaxial LaAlO 3 thin films on SrTiO 3 (100) substrates. The adopted in-situ strategy involves a molten mixture consisting of the La(hfa) 3 d diglyme (Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, diglyme = bis(2-methoxyethyl)-ether) precursor which acts as a solvent for the Al(acac) 3 (Hacac = acetylacetone). Thermal analyses and ªin situº Fourier transform infrared (FTIR) spectra of the gas phase proved that the molten multi-component source possesses suitable stability during vaporization and mass transport processes. The LaAlO 3 films have smooth surfaces and are epitaxially grown.