MOCVD of LaAlO<sub>3</sub> Films from a Molten Precursor Mixture: Characterization of Liquid, Gas, and Deposited Phases

Malandrino, Graziella; Condorelli, Guglielmo G.; Nigro, Raffaella Lo

doi:10.1002/cvde.200306286

Cited by 18 publications

(17 citation statements)

References 29 publications

(34 reference statements)

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“…3 analogously to its homologous La(hfa) 3 ·diglyme. [11][12][13][14] The thermal behavior of the mixture Y(hfa) 3 ·diglyme/ Al(acac) 3 has been characterized by thermogravimetric analysis (TGA) under atmospheric pressure and a nitrogen flow. TGA data (Fig.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxial YAlO₃ Films on (100)SrTiO₃ Substrates: The Use of Pole Figures as a Non‐invasive Tool to Assess the Direction of Growth

Malandrino¹,

Grigoli²,

Fragalá³

2008

Chemical Vapor Deposition

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YAlO 3 films are grown on (100)SrTiO 3 substrates through an in-situ novel metal-organic (MO)CVD strategy involving a molten source consisting of the second-generation Y(hfa) 3 ·diglyme (Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, diglyme = bis(2-methoxyethyl)ether) precursor which acts as a solvent for the Al(acac) 3 (Hacac = acetylacetone). The X-ray diffraction (XRD) patterns show that the films are crystalline and highly oriented, while compositional analysis indicates that the films possess the correct 1:1 ratio. Pole figures are applied as a simple, economic, non-invasive tool to assess the growth direction of YAlO 3 films.

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Section: Introductionmentioning

confidence: 99%

Heteroepitaxial YAlO₃ Films on (100)SrTiO₃ Substrates: The Use of Pole Figures as a Non‐invasive Tool to Assess the Direction of Growth

Malandrino¹,

Grigoli²,

Fragalá³

2008

Chemical Vapor Deposition

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“…A similar approach has been successfully applied for a large variety of thin film materials ranging from LaAlO 3 , [15] La 2Àx Ba x OCuO 4þd , [16] BaCaCuOF matrices for Tl 2 Ba 2 CaCu 2 O x films, [17] YBa 2 Cu 3 O 7Àd [18] and CaCu 3-Ti 4 O 12 [19] films.…”

Section: Thermal Analysis Of the Precursor Mixturesmentioning

confidence: 98%

“…In both cases, La(hfa) 3 diglyme acts as a solvent for the Sr and Mn precursors, as previously reported for the case of LaAlO 3 film growth. [15,16] Evaporation from the molten sources has been achieved at a constant temperature of 110 8C and 130 8C for mixtures 1 and 2, respectively. The use of fluorinated sources, i.e., the presence of fluorine in the Sr, Mn, and La architectural frameworks, has required an accurate optimization of MOCVD parameters and the use of water vapor-saturated oxygen flow to obtain fluorine-free films (vide infra).…”

Section: Thermal Analysis Of the Precursor Mixturesmentioning

confidence: 99%

In‐Situ Growth and Characterization of Highly Textured La_0.9Sr_0.1MnO₃ Films on LaAlO₃(100) Substrates

Toro

Malandrino

Perdicaro

et al. 2010

Chemical Vapor Deposition

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a 0.9 Sr 0.1 MnO 3 (LSMO) films are grown on LaAlO 3 (100) substrates through metal-organic (MO)CVD using ''second generation'' precursors of Sr, La, and Mn. An in-situ novel MOCVD strategy is adopted which involves the use of two different molten mixtures consisting of the La(hfa) 3 diglyme and Sr(hfa) 2 tetraglyme adducts as La and Sr sources, respectively, and Mn(hfa) 2 tmeda or Mn(tmhd) 3 as Mn precursor [Hhfa ¼ 1,1,1,5,5,5-hexafluoro-2,4-pentanedione, diglyme ¼ bis(2-methoxyethyl)ether, tetraglyme ¼ 2, 5,8,11,14-pentaoxapentadecane, tmeda ¼ N,N,N 0 ,N 0 -tetramethylethylendiamine and H-tmhd ¼ 2,2,6,6-tetramethyl-3,5-heptandione]. The X-ray diffraction (XRD) patterns show that the films are c-axis oriented. Pole figures are applied as a simple non-invasive tool to assess the textural nature of these LSMO films. The morphology is investigated using the scanning electron microscopy (SEM) and atomic force microscopy (AFM) that reveal the presence of grains, 300 nm average dimensions, and a root mean square (rms) surface roughness of 21 nm. Chemical composition through energy-dispersive X-ray (EDX) analysis indicates that the films possess a stoichiometry of about 0.9:0.1:1 ratio, while X-ray photoelectron spectroscopy (XPS) depth profiles are used to assess the vertical compositional homogeneity. The ferromagnetic/paramagnetic and metallic/insulating transition temperatures are determined by standard four-contact resistivity versus temperature measurements.

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“…The multi‐component source consists of a homogeneous mixture of Ti(tmhd) 2 (O ‐i Pr) 2 (Htmhd = 2,2,6,6‐tetramethyl‐3,5‐heptandione; O ‐i Pr = iso‐propoxide), Cu(tmhd) 2 and Ca(hfa) 2 •tetraglyme (Hhfa = 1,1,1,5,5,5‐hexafluoro‐2,4‐pentanedione; tetraglyme = 2,5,8,11,14‐pentaoxapentadecane), which because of its low melting point acts as a solvent for the Ti 4+ and Cu 2+ complexes. The choice for these precursors and of the molten mixture approach has been prompted by the previous experience on the growth of complex oxides such as LaAlO 3 or YBa 2 Cu 3 O 7–δ and it has been anticipated by the study of the thermal behaviour of each single precursor. The thermal behaviours of Ca(hfa) 2 •tetraglyme, Cu(tmhd) 2 and Ti(tmhd) 2 (O ‐i Pr) 2 single precursors have been investigated by thermogravimetric (TG) measurements and differential scanning calorimetry (DSC) and compared to the properties of their Ca:Cu:Ti mixture .…”

Section: Mocvd Process For Cacu3ti4o12 Thin Filmsmentioning

confidence: 99%

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

Nigro

2017

Adv Materials Inter

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range. [7][8][9] The CaCu 3 Ti 4 O 12 (CCTO) perovskite has been defined "giant-κ" materials, and looked suitable for high capacity density planar condensers representing key devices for wireless communication. In fact, since it did not show any ferroelectric transition or relaxor behaviour, appeared really attractive for the replacement of ferroelectrics, which are known for having lower dielectric constant values and stronger temperature dependence. Huge efforts of different research groups have been devoted to determine the origin of such prodigious dielectric response. [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] Some theories tried to correlate the CCTO high-κ value to its peculiar cubic perovskite structure. [10][11][12] In fact, it has been demonstrated that the Ti 4+ symmetry in CCTO is much lower than in a cubic standard ABO 3 perovskite cell, because of the tilting of TiO 6 octahedra caused by the square-planar Cu 2+ ions. [14] Hence, its high permittivity could be due to the local dipole moments associated with off-center displacement of Ti 4+ ions, which could also rule out the pure ferroelectric behaviour. Nevertheless, the most accepted explanation of such huge dielectric constant has been related to the "internal barrier-layer mechanism", which has been discussed in CCTO ceramics in terms of conducting grains and insulating grain boundaries. [13][14][15][16][17][18][19][20][21] All these results have been actually collected on bulk materials, however it is not obvious to find the same properties on thin films. In this context, in order to evaluate the potentiality for a real integration of this novel material in device fabrication, the investigation of thin film dielectric properties has been a mandatory issue. First attempts to grow CCTO thin films have been carried out by pulsed laser deposition technique on perovskite oxide substrates [22][23][24][25] and later on technological substrates such as platinum electrodes on silicon. [26][27][28][29] It has been found that the dielectric constant of CCTO thin films is not as huge as in the case of CCTO ceramics, and that, in best conditions, a dielectric constant value in the order of 1500 can be reached [27] and, most of all, that this value strongly depends on many factors, such as deposition conditions, substrate nature, post-deposition treatments and so on. [29][30][31][32][33][34] Actually, a variation of the dielectric constant value with temperature or frequency has been also observed in ceramics, depending on synthetic method and/or post-sintering conditions. [35][36][37] From these discoveries until CaCu 3 Ti 4 O 12 (CCTO) perovskite has been widely investigated because of its excellent dielectric properties, i.e. huge and constant permittivity upon varying temperature and frequencies, which are really attractive in wireless communication devices. These characteristics have been originally demonstrated in single crystals and ceramics. Hence, huge efforts have been focused on the fabrication and investigation of CCTO thin films. F...

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MOCVD of LaAlO₃ Films from a Molten Precursor Mixture: Characterization of Liquid, Gas, and Deposited Phases

Cited by 18 publications

References 29 publications

Heteroepitaxial YAlO₃ Films on (100)SrTiO₃ Substrates: The Use of Pole Figures as a Non‐invasive Tool to Assess the Direction of Growth

Heteroepitaxial YAlO₃ Films on (100)SrTiO₃ Substrates: The Use of Pole Figures as a Non‐invasive Tool to Assess the Direction of Growth

In‐Situ Growth and Characterization of Highly Textured La_0.9Sr_0.1MnO₃ Films on LaAlO₃(100) Substrates

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

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MOCVD of LaAlO3 Films from a Molten Precursor Mixture: Characterization of Liquid, Gas, and Deposited Phases

Cited by 18 publications

References 29 publications

Heteroepitaxial YAlO3 Films on (100)SrTiO3 Substrates: The Use of Pole Figures as a Non‐invasive Tool to Assess the Direction of Growth

Heteroepitaxial YAlO3 Films on (100)SrTiO3 Substrates: The Use of Pole Figures as a Non‐invasive Tool to Assess the Direction of Growth

In‐Situ Growth and Characterization of Highly Textured La0.9Sr0.1MnO3 Films on LaAlO3(100) Substrates

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu3Ti4O12) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties

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MOCVD of LaAlO₃ Films from a Molten Precursor Mixture: Characterization of Liquid, Gas, and Deposited Phases

Heteroepitaxial YAlO₃ Films on (100)SrTiO₃ Substrates: The Use of Pole Figures as a Non‐invasive Tool to Assess the Direction of Growth

Heteroepitaxial YAlO₃ Films on (100)SrTiO₃ Substrates: The Use of Pole Figures as a Non‐invasive Tool to Assess the Direction of Growth

In‐Situ Growth and Characterization of Highly Textured La_0.9Sr_0.1MnO₃ Films on LaAlO₃(100) Substrates

MOCVD Approach to the Growth of Calcium Copper Titanate (CaCu₃Ti₄O₁₂) Thin Films: The Role of the Substrate Nature on Film Structural and Dielectrical Properties