Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors

Estimating the dielectric constant of BaTiO3–polymer nanocomposites by a developed Paletto model

“… 2,8 Although polymeric materials, such as polystyrene and polyamide, exhibit excellent mechanical properties, they have disadvantages in terms of low dielectric constants, and the usage of such materials requires high electrical voltage. 9 It is noteworthy that ceramic materials such as barium titanate (BaTiO 3 ) 10 and aluminum oxide (Al 2 O 3 ) 11 possess a high dielectric constant, but their applications in many fields are limited, due to their inherent brittleness and poor processability. 12,13 Therefore, developing ceramic–polymer nanocomposites with a high dielectric constant is a promising method for preparing composite materials with excellent dielectric properties, 14–16 in which ceramic nanoparticles are distributed throughout the polymer matrix.…”

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing

“…Nonetheless, they require the use of expensive specialized tools in cleanroom environment and are mainly suitable for the deposition of few nanometers thick films. On the other hand, the sol-gel spin coating route, due to its simplicity and cost-effectiveness, is being progressively explored for large-area device fabrication 45 , including thin film transistors (TFT) 46,47 and nonvolatile resistive memories 35–44 .…”

A Low-Temperature Solution-Process High-k Dielectric for High-Performance Flexible Organic Field-Effect Transistors

“…In Figure 2B, the XRD pattern of the AlO x film, obtained by annealing at the high temperature of 400°C and DUV 80 min, are almost the same; there is no obvious diffraction peak for either sample, so the thin films are amorphous. For dielectric application, the amorphous structure is preferred because the presence of a crystalline structure or grain boundaries may become an alternate leakage current path or increase the surface roughness (Xia et al, 2018). Next, the surface mophology of AlO x thin film is characterized by AFM.…”

“…Applying a high-permittivity (high-k) dielectric material allows the achievement of large unit-area capacitance with reasonable thickness that could largely reduce the operating voltage of OFETs while at the same time suppressing the tunneling current. While many high-k materials have been reported for OFET applications, such as AlO x , HfO x , ZrO x , and BST (Wang et al, 2014;Park et al, 2015;Sung et al, 2015;Park et al, 2017;Xia et al, 2018;Yang et al, 2018;Mullapudi et al, 2019;Wang et al, 2019), most of them require vacuum deposition or solution processing at a high annealing temperature.…”

“…Among different material deposition methods, the solution processing of high-k dielectrics by the sol-gel method is promising for its low-cost, being vacuum-free, and compatibility with industrial processing technologies such as spin coating, dip coating, inkjet printing, and roll-to-roll fabrication (Quah et al, 2010;Wang et al, 2013;Wang et al, 2014;Park et al, 2015;McKerricher et al, 2017;Quah et al, 2017;Heo et al, 2018;Jo et al, 2018;Xia et al, 2018;Bolot et al, 2019;Sun et al, 2019). In addition, the solution formed a densely packed thin film with atomic flat-surface roughness, thus facilitating good charge transport in organic semiconductors when deposited onto the dielectric layer, leading to high carrier mobility and low leakage current.…”