Journal of Elec Materi
 2020
DOI: 10.1007/s11664-020-08164-0
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SOI Schottky Barrier Nanowire MOSFET with Reduced Ambipolarity and Enhanced Electrostatic Integrity

Amit Saxena
1
,
Manoj Kumar
2
,
R. K. Sharma3
et al.
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Cited by 8 publications
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References 15 publications
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Gate All Around 22 nm SOI Schottky Barrier MOSFET with High ION/IOFF Current Ratio for Low-Power Digital and Analog Circuit Applications

Saxena
1
,
Sharma
2
,
Kumar
3
et al. 2023
Lecture Notes in Electrical Engineering
1
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Gate All Around 22 nm SOI Schottky Barrier MOSFET with High ION/IOFF Current Ratio for Low-Power Digital and Analog Circuit Applications

Saxena
1
,
Sharma
2
,
Kumar
3
et al. 2023
Lecture Notes in Electrical Engineering
1
0
0
0
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Small signal model parameter extraction for cylindrical silicon-on-insulator Schottky barrier MOSFET

Saxena
1
,
Kumar
2
,
Sharma
3
et al. 2023
Microsyst Technol
1
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0
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RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

Kumar,
Mahajan,
Deswal
et al. 2024
Microsyst Technol
0
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