RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

Kumar, Jitender; Mahajan, Aparna N.; Deswal, S. S.; Saxena, Amit; Gupta, R. S.

doi:10.1007/s00542-023-05590-y

Microsyst Technol

2024

DOI: 10.1007/s00542-023-05590-y

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RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

Jitender Kumar,

Aparna N. Mahajan,

S. S. Deswal

et al.

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RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications

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References 37 publications

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