tallized by N, reactive sputtering.' On the basis of the previous result, as-deposited Fe-Hf-C-N thin films, prepared by N, reactive RF magnetron sputtering, are investigated to form nanocrystalline structure during deposition and to improve the soft magnetic properties, especially the high frequency permeabilities of the films, by controlling both the compositions of the films and the sputtering conditions, such as input power and N2 partial pressure etc. As-deposited Fe-Hr-N thin films are also investigated by the same procedure for the applications to the simplified fabrication of magnetic devices. The Fe-Hf-C-N and the Fe-Hf-N thin films show the excellent soft magnetic properties of saturation magnetization (4 T Ms)