SnO2 thin films prepared by the sol-gel process

Racheva, T.M.; Critchlow, Gary W.

doi:10.1016/s0040-6090(96)08956-0

Cited by 70 publications

(21 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Although we only had three data points at each temperature, there appeared to have been a limiting carrier concentration that did not exceed the crystalline films at a lower oxygen content. The hall mobility in both films appeared to have been comparable and the higher values were 5 cm 2 /Vs to 7 cm 2 /Vs, which was similar to the reported value of sputtered SnO 2 films [10,11]. Since the mobility depended on several scattering mechanisms [8,14,24,25], crystalline films at 300°C could have had a large grain formation, as explained above, leading to a compatible mobility value with amorphous films.…”

Section: Resultssupporting

confidence: 83%

“…As these materials are often desired in a thin film form, a wide range of deposition techniques have been used to deposit SnO 2 thin films: sputtering, pulsed laser deposition, chemical vapor deposition (CVD), sol-gel techniques, and spray pyrolysis [6][7][8][9][10][11][12][13][14]. Sputtering techniques are the most commonly used when device quality films are required.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural, electrical, and optical properties of reactively sputtered SnO2 thin films

Kim

Oliver

2010

Met. Mater. Int.

View full text Add to dashboard Cite

SnO 2 thin films prepared by reactive rf magnetron sputtering have been investigated to examine the effect of deposition parameters on its crystallinity and electrical and optical properties. Of particular interest was whether the nonequilibrium nature of sputtering could create large departures from the bulk defect properties, especially in amorphous films. Two deposition parameters were examined: substrate temperature (Tsub) and oxygen content. The films were characterized by X-ray diffraction (XRD), optical transmission, four point probe electrical conductivity, and Hall effect measurements. The crystallinity was found to be enhanced by the incease in each of the three processing variables. Below a substrate temperature of 300°C a large processing window for depositing amorphous SnO2 was found.

show abstract

Section: Resultssupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Structural, electrical, and optical properties of reactively sputtered SnO2 thin films

Kim

Oliver

2010

Met. Mater. Int.

View full text Add to dashboard Cite

show abstract

“…The calcium is thought to have been leached from the glass during the sputtering process, as has been observed previously in the case of sol-gel deposition of Sn02 onto glass. 15 Notably, the films grown by MOCVD do not contain this impurity. The fact that the levels of Ca and C contamination in the sputtered film are roughly similar may imply that they are present in the form of CaCO3 Such an assumption leads to an average stoichiometry for the tin oxide of Sn0202, changing to SnO,,5 near the surface of the film, as shown in Table III.…”

Section: Methodsmentioning

confidence: 99%

The Gas‐Sensing Properties of Tin Oxide Thin Films Deposited by Metallorganic Chemical Vapor Deposition

Brown

Cheney

Haycock

et al. 1997

J. Electrochem. Soc.

View full text Add to dashboard Cite

A series of undoped Sn02 films was grown by metallorganic chemical vapor deposition (MOCVD) from an Sn(OtBu)4 precursor. The characterization of their CO-and H20-gas sensing properties is reported. The films were very sensitive to low levels of CO at elevated temperatures (200 to 400°C), although a significant cross-sensitivity to relative humidity was found. Response and recovery times were very short in comparison with a Pt-doped thick film Sn02 pellet. The optimum working temperature was found to be 300 to 350°C, where linear responses to CO concentration and to relative humidity were seen once drift had been taken into account. All MOCVD films tested showed superior responses to a sputtered film. InfroductionThe metal oxide semiconductor tin oxide (Sn02) has a range of important applications, such as in transparent and conducting coatings on glass,1 and in gas-sensing devices used in a variety of applications.2 The require-

show abstract

“…Bu nedenle spintronik uygulamalar için Co katkılı ZnO (Co:ZnO) ince filmlerin oldukça verimli çalışacağı öngörülmektedir. Özellikle Mn, Co ve Fe gibi geçiş elementlerinin (TM) belirli oranlarda ZnO yapısına girmesi; spin valfi, spintabanlı ışık yayan diyot ve spin-alan etkili transistör uygulamaları için oldukça elverişli olacağına dair araştırmalar vardır [19][20][21][22]. Bu tür malzemelerin ince filmleri, çeşitli film hazırlama tekniklerinin yanı sıra çözelti-temelli (kimyasal buhar çöktürme, ultrasonik kimyasal püskürtme, spin kaplama vb.)…”

Section: Introductionunclassified

ZnO ince filmlerin sıcaklığa bağlı elektriksel davranışında co etkisinin incelenmesi

Gungor¹,

Güngör²

2017

deufmd

View full text Add to dashboard Cite

ZnO, Co katkılama, elektriksel iletkenlik, ultrasonik kimyasal püskürtme tekniği. Özet: ZnO ince filmlerin sıcaklığa bağlı elektriksel özelliklerinde Co etkisi incelenmiştir. Cam alttaş üzerine, farklı Co molaritelerinde hazırlanan Co katkılanmış ZnO ince filmler için ultrasonik kimyasal püskürtme tekniği (UKP) kullanılmıştır. Co katkısının ZnO ince filmlerin yapısal, optiksel ve elektriksel özelliklerine etkisi x-ışını kırınım (XIK), taramalı elektron mikroskopu (SEM), EDS, optiksel geçirgenlik ve elektriksel iletkenlik ölçüm sonuçları ile değerlendirilmiştir. Co katkılı ZnO örneklerin yapısında, ZnO'e ait hekzagonal wurtzit yapının baskın olduğu gözlenmiştir. ZnO kristal yapısına giren Co iyonlarının etkisi, XIK desenlerinde kobalt oksite ait kübik fazın (200) yansıma pikindeki şiddet farkının ortaya çıkmasıyla gözlenmiştir. Co katkılı ZnO yapıdaki faz değişiminin, Co miktarı ile kontrol edildiği anlaşılmıştır. Örneklerdeki Co'ın eşik konsantrasyon değeri EDS analizi ile belirlenmiştir. ZnO örgüsü içindeki Co'ın varlığı, optik geçirgenlik spektrumlarındaki Co +2 iyonuna ait karakteristik d-d geçişlerinin gözlenmesiyle kanıtlanmıştır. Co katkılı ZnO örneklerin sıcaklığa bağlı akım değişimleri, ana malzeme olan ZnO'in davranışı ile uyumludur. Karanlık iletkenliklerinden elde edilen lnk-1/T grafiğinde, yüksek sıcaklık bölgesinde aktivasyon türü davranış gözlenmektedir. Artan Co miktarı ile tek tür aktivasyon enerjisinde gözlenen artış, Co'ın başlangıç ön çözelti molaritesindeki kritik değerden sonra azalma eğilimi göstermektedir.

show abstract

SnO2 thin films prepared by the sol-gel process

Cited by 70 publications

References 15 publications

Structural, electrical, and optical properties of reactively sputtered SnO2 thin films

Structural, electrical, and optical properties of reactively sputtered SnO2 thin films

The Gas‐Sensing Properties of Tin Oxide Thin Films Deposited by Metallorganic Chemical Vapor Deposition

ZnO ince filmlerin sıcaklığa bağlı elektriksel davranışında co etkisinin incelenmesi

Contact Info

Product

Resources

About