A series of undoped Sn02 films was grown by metallorganic chemical vapor deposition (MOCVD) from an Sn(OtBu)4 precursor. The characterization of their CO-and H20-gas sensing properties is reported. The films were very sensitive to low levels of CO at elevated temperatures (200 to 400°C), although a significant cross-sensitivity to relative humidity was found. Response and recovery times were very short in comparison with a Pt-doped thick film Sn02 pellet. The optimum working temperature was found to be 300 to 350°C, where linear responses to CO concentration and to relative humidity were seen once drift had been taken into account. All MOCVD films tested showed superior responses to a sputtered film.
InfroductionThe metal oxide semiconductor tin oxide (Sn02) has a range of important applications, such as in transparent and conducting coatings on glass,1 and in gas-sensing devices used in a variety of applications.2 The require-
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