SnO₂‐Based Perovskite Solar Cells: Configuration Design and Performance Improvement

Abstract

Organic‐inorganic hybrid perovskite solar cells (PSCs) have developed rapidly in recent years owing to the low cost and high power conversion efficiency achieved. The excellent performance of PSCs is attributed to the superior electrical properties of each layer, including the electron transport layer (ETL), light‐harvest layer, hole transport layer. As one of the most promising ETL materials for PSCs, SnO2 shows excellent transmission, an appropriate energy band gap, a deep conduction band level, and high electron mobility, leading to efficient electron extraction and transport. Here, recent advancements in the PSCs with SnO2 ETLs and endeavors aimed at improving the performance of this photovoltaic device are reviewed. Several typical configurations of SnO2 based PSCs are discussed, including the planar structure, mesoporous structure, inverted structure and flexible PSCs. The efforts of modification and composite SnO2 with other metal oxides are also assessed. Finally, an overview of the perspectives and challenges for the future of SnO2 based PSCs is provided.

All-Perovskite Photodetector with Fast Response

“…1e, the decorated CsPbBr 3 QDs can only enhance the absorption for a narrow range (400-500 nm) in comparison with CH 3 NH 3 PbI 3 −x Cl x layer solely. Furthermore, we also calculated the bandgap of QDs according to the Tauc equation [39][40][41][42][43][44] as shown in Additional file 1: Figure S1. The bandgap is about 2.38 eV.…”

Influence of Chloride/Iodide Ratio in MAPbI3-xClx Perovskite Solar Devices: Case of Low Temperature Processable AZO Sub-Layer

“…The final solutions were then stirred at room temperature for three hours. In order to adapt all thicknesses at Energies 2020, 13,1927 4 of 20 about 300 nm, it was necessary to adjust and reduce the concentrations of the mother solutions by adding DMF. Fabrication of perovskite devices.…”

“…In addition, many low cost and low energy consumption roads are affordable to fabricate SnO 2 nanomaterials, and they can easily be processed by low-temperature methods (<200 • C). The use of SnO 2 as efficient electron transporting layer for perovskite devices has now largely been studied and is the subject of numerous reviews [13][14][15]. As regards ZnO, developed systems showed poor stability [16], and the attention has now shifted to aluminum doped ZnO (AZO) [17][18][19], that results in a more stable interface with perovskite [20].…”

Enhanced Crystallinity of Triple-Cation Perovskite Film via Doping NH4SCN

“…The bandgap of conventional OIMHP films is at the range of 1.5-1.6 eV, and the corresponding theoretical Shockley-Queisser limit efficiency (TS-QLE) is higher than 30% [2][3][4]. However, the reported highest PCE is much lower than the TS-QLE due to the trap-assisted non-radiative recombination in the perovskite film [5][6][7][8]. The trap-assisted non-radiative recombination intensity often depends on the defect density in perovskite films and most of the defects are spread on the surface and boundary of perovskite crystal grains due to the atomic vacancies [7,9].…”