All-Perovskite Photodetector with Fast Response

Yue, Yang; Dai, Haitao; Yang, Feng; Zhang, Yating; Luo, Dan; Zhang, Xiaoli; Wang, Kai; Sun, Xiao Wei; Yao, Jianquan

doi:10.1186/s11671-019-3082-z

Cited by 57 publications

(36 citation statements)

References 49 publications

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“…Two important figures of merit for photodetector, such as responsivity (R) and detectivity (D * ), were determined using the following equations [35,36]:…”

Section: Resultsmentioning

confidence: 99%

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

et al. 2020

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GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A highperformance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

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“…Two important figures of merit for photodetector, such as responsivity (R) and detectivity (D * ), were determined using the following equations [35,36]:…”

Section: Resultsmentioning

confidence: 99%

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

et al. 2020

View full text Add to dashboard Cite

show abstract

“…Two important figures of merit for photodetector, such as responsivity (R) and detectivity (D * ), were determined using the following equations [35,36]: (see Formulas 2 and 3 in the Supplementary Files) where I p is photocurrent that equals to absolute value of current under irradiation subtracting that in the dark, A is the effective area of the device, P opt is incident optical power, I d is dark current and q is unit charge (1.6×10 -19 C).…”

Section: Resultsmentioning

confidence: 99%

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Zhao

Tang

Yang

et al. 2020

Preprint

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Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

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“…While these EQEs are far from those offered by InGaN-based LEDs, easy solution-processability makes these materials attractive for applications in solid-state lighting and nextgeneration display technologies [164,[173][174][175][176][177]. In addition, various perovskite-based photodetectors with high responsivities [178][179][180], flexibility [181][182][183][184], and fast response speeds [150,178,[185][186][187] have also been demonstrated widely [188].…”

Section: State-of-the-art Devicesmentioning

confidence: 99%

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Ng¹,

Holguín‐Lerma²,

Kang³

et al. 2021

J. Phys. D: Appl. Phys.

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Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These

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All-Perovskite Photodetector with Fast Response

Cited by 57 publications

References 49 publications

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

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