Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation

Lee, Jong-Soo; Vescan, A.; Wieszt, A.; Dietrich, R.; Leier, H.; Kwon, Young–Se

doi:10.1049/el:20010100

Cited by 49 publications

(25 citation statements)

References 4 publications

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“…However, some crucial problems such as large leakage current in Schottky contacts [1][2][3][4] and drain current collapse [5,6] that are related to the AlGaN surface are not completely solved. Degradation of output power under large bias and high frequency conditions due to these is particularly serious for enhancement high-power/high-frequency performances of AlGaN/GaN HFETs [7]. Additionally, another issue for future applications is that the cut-off frequency (f T ) of the AlGaN/GaN HFETs tends to saturate around 100-200GHz, even if the gate length is reduced less than 100 nm.…”

Section: Introductionmentioning

confidence: 99%

Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation

Kotani

Kasai

Hasegawa

et al. 2005

e-J. Surf. Sci. Nanotechnol.

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Gate leakage currents in AlGaN/GaN HFETs were investigated by comparing experiments with computer simulations based on the thin surface barrier (TSB) model involving unintentional surface donors. Leakage currents in large area Schottky diodes were explained by the TSB model involving nitrogen vacancy related deep donors and oxygen shallow donors. On the other hand, in AlGaN/GaN HFETs with nanometer scale Schottky gates, gate leakage currents include an additional leakage component due to lateral electron injection through tunneling at the gate edge where the barrier thinning is mainly controlled by oxygen donors. By combining vertical and lateral tunneling components, experiments could be reproduced on computer. Lateral components may be responsible for current collapse.

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Section: Introductionmentioning

confidence: 99%

Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation

Kotani

Kasai

Hasegawa

et al. 2005

e-J. Surf. Sci. Nanotechnol.

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“…The use of silicon nitride (Si 3 N 4 ) as a surface passivation to mitigate these effects has been extensively studied in the literature. [7][8][9][10][11][12][13] An interesting feature is the rise in maximum drain current (I d-max ) and gate leakage current (I g ) upon passivation, but the mechanism behind these observed electrical changes is still unclear. Consistency in the effects of passivation is also a major problem, with authors observing different levels of incremental change in I d-max (between 3% and 60%) after dielectric deposition.…”

Section: Introductionmentioning

confidence: 99%

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Tan

Houston

Hill

et al. 2004

Journal of Elec Materi

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The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition was used to vary the amount of stress induced by a passivating dielectric on the surface of the devices. Initial data suggested a strong influence from the induced dielectric stress, but the low-frequency, radio-frequency (RF) excitation of the plasma deposition process was found to induce a severe nonreversible damage to the exposed AlGaN surface through N ion bombardment. The consequence is a drastic reduction of the sheet carrier concentration and mobility of the twodimensional electron gas (2DEG). Subsequently, an alternative damage-free technique using a helium precursor was used to obtain compressive films. Based on the results, uniform dielectric stress has a minimal impact on the polarization charges within the AlGaN barrier.

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“…In addition, GaN HEMTs require some form of surface passivation to reduce the effects of current collapse, which is a reduction of drain current under high source-drain voltage applications. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] Films such as SiN X , MgO, and Sc 2 O 3 have proven effective in reducing collapse problems. [15][16][17][18][19][20][21][22][23][24] We have previously used MgO and Sc 2 O 3 as both gate oxides and surface passivation films.…”

Section: Introductionmentioning

confidence: 99%

Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System

Chen

Hlad

Gerger

et al. 2006

Journal of Elec Materi

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MgCaO offers promise as a gate dielectric for GaN-based metal-oxide-semiconductor (MOS) transistors, particularly in combination with environmentally stable capping layers such as Sc 2 O 3 . X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the valence band (DE v ) of Mg 0.5 Ca 0.5 O/GaN heterostructures in which the MgCaO was grown by rf plasma-assisted molecular beam epitaxy on top of thick GaN templates on sapphire substrates. A value of DE v = 0.65 eV ± 0.10 eV was obtained by using the Ga 3d energy level as a reference. Given the bandgap of 7.45 eV for the MgCaO, we infer a conduction band offset DE C of 3.36 eV in the Mg 0.5 Ca 0.5 O system.

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Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation

Cited by 49 publications

References 4 publications

Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation

Tunneling Injection of Electrons at Nanometer-Scale Schottky Gate Edge of AlGaN/GaN Heterostructure Transistors and Its Computer Simulation

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System

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