Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model

A physical model of electron trapping/detrapping in electrically stressed oxide

“…2. Furthermore, the proposed model is calculated much more effectively than the model in [9], since it does not need to solve the Possion-Schroedinger equations.…”

“…In recent years, there are many researches on the T-D model, but most of them are based on the statistical empirical equations [2,3,8], thus cannot give the filling state of bulk traps. D. Garetto et al proposed a T-D model based on multi-phonon trap-assistedtunneling (TAT) mechanism [9], but its calculation is too complicated since it needs to solve the Possion-Schroedinger equations. Besides, it does not include the detrapping way of thermal emission.…”

Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

“…The equation has been solved in steady-state conditions (@q T /@t = 0) for DC analysis, and in the Fourier domain for AC analysis following the small-signal model in [17]. The dynamics of multiphonon trapping and tunneling mechanisms are included in the e À C/E frequencies s À1…”

Multi-technique study of defect generation in high-k gate stacks

“…Recently, a number of publications [5], [6], [7], [8], [9], [10], [11] reexamined the importance of the multi-phonon-emission assisted structural trap relaxation in the capture and emission dynamics of the dielectric traps. In the frame of a non-elastic process description, the electron capture/emission by a bulk oxide trap involves tunneling of charge carriers from the substrate to the trap and its localization at the trap site accompanied by a distortion of the surrounding lattice.…”