Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Garetto, D.; Randriamihaja, Y. Mamy; Zaka, A.; Rideau, D.; Schmid, Alexandre; Jaouen, H.; Leblebici, Yusuf

doi:10.1016/j.sse.2011.10.024

Cited by 14 publications

(12 citation statements)

References 33 publications

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“…It is believed that the observed increase in surface capacitance is a result of an increase in surface charge carriers (electrons or holes) in the unoccupied surface states of the BFO nanowire by multiphonon process and has been reported previously for metaloxide-semiconductor (MOS) thin films. 23,24 A systematic recording of the variations in dissipation as a function of incident IR wavelengths gives the spectrum of the adsorbed species, bringing selectivity. Experimentally observed spectrum of RDX molecules adsorbed on nanowire is presented in Figure 5a.…”

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confidence: 99%

Photothermal Electrical Resonance Spectroscopy of Physisorbed Molecules on a Nanowire Resonator

2015

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Mid-infrared (IR) photothermal spectroscopy of adsorbed molecules is an ideal technique for molecular recognition in miniature sensors with very small thermal mass. Here, we report on combining the photothermal spectroscopy with electrical resonance of a semiconductor nanowire for enhanced sensitivity, selectivity, and simplified readout. Wide band gap semiconductor bismuth ferrite nanowire, by virtue of its very low thermal mass and abundance of surface states in the band gap, facilitates thermally induced charge carrier trapping in the surface states, which affects its electrical resonance response. Electrical resonance response of the nanowire varies significantly depending on the photothermal spectrum of the adsorbed molecules. We demonstrate highly selective detection of mid-IR photothermal spectral signatures of femtogram level molecules physisorbed on a nanowire by monitoring internal dissipation response at its electrical resonance.

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confidence: 99%

Photothermal Electrical Resonance Spectroscopy of Physisorbed Molecules on a Nanowire Resonator

2015

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“…For the calculation of the interface state density we used the difference of the displacement current between uncycled and cycled capacitance and integrated over the positive values. From the simulation of the trapping rate and a gate voltage ramp in the kHz regime we can conclude that only states at the Si/SiO 2 interface are filled [9]. However the write disturb transients show that trapping does not saturate for long disturb times, which points to the conclusion that the whole tunnel oxide is degraded during the endurance cycling.…”

Section: Device Degradation and Test Circuitmentioning

confidence: 91%

Investigation of the reliability degradation of scaled SONOS memory transistors

Ocker

Slesazeck

Hoffmann

et al. 2015

2015 IEEE International Integrated Reliability Workshop (IIRW)

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The polarity-dependent device degradation during AC stress of polysicilicon-oxide-nitride-oxide-silicon (SONOS) transistor poses considerable reliability challenges for scaled SONOS gate oxide thicknesses. However, the mechanism responsible for the endurance degradation has been scarcely studied so far. Especially electrons injected from the gate are supposed to be responsible for the degradation. An on-chip test circuit was developed to measure those gate currents. A clear correlation was found with retention-after-cycling experiments and interface degradation measured with the pulsed-capacitance technique. Based on the results, defect generation in the tunnel oxide was identified as the main degradation mechanism. The results are supported by electrical simulation of the transient behavior of the SONOS gate dielectric during program and erase

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“…6. By including the multi-phonon emission at room temperature (Huang et al, 2005b;Ridley, 1978), in this case the capture rate is calculated as (Jim´enez-Molinos et al, 2001;Garetto et al, 2012): …”

Section: Non-radiative Recombination With Defectsmentioning

confidence: 99%

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

Huang¹,

Gao²,

Cardimona³

et al. 2015

American Journal of Space Science

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A multi-timescale hybrid model is proposed to study microscopically the degraded performance of electronic devices, covering three individual stages of radiation effects studies, including ultra-fast displacement cascade, intermediate defect stabilization and cluster formation, as well as slow defect reaction and migration. Realistic interatomic potentials are employed in molecular-dynamics calculations for the first two stages up to 100 ns as well as for the system composed of layers with thicknesses of hundreds of times the lattice constant. These quasi-steady-state results for individual layers are input into a ratediffusion theory as initial conditions to calculate the steady-state distribution of point defects in a mesoscopic-scale layered-structure system, including planar biased dislocation loops and spherical neutral voids, on a much longer time scale. Assisted by the density-functional theory for specifying electronic properties of point defects, the resulting spatial distributions of these defects and clusters are taken into account in studying the degradation of electronic and optoelectronic devices, e.g., carrier momentum-relaxation time, defect-mediated non-radiative recombination, defect-assisted tunneling of electrons and defect or charged-defect Raman scattering as well. Such theoretical studies are expected to be crucial in fully understanding the physical mechanism for identifying defect species, performance degradations in field-effect transistors, photo-detectors, light-emitting diodes and solar cells and in the development of effective mitigation methods during their microscopic structure design stages.

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Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Cited by 14 publications

References 33 publications

Photothermal Electrical Resonance Spectroscopy of Physisorbed Molecules on a Nanowire Resonator

Photothermal Electrical Resonance Spectroscopy of Physisorbed Molecules on a Nanowire Resonator

Investigation of the reliability degradation of scaled SONOS memory transistors

Multi-Timescale Microscopic Theory for Radiation Degradation of Electronic and Optoelectronic Devices

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