Slip Casting and Thermoelectric Property of CrSi&lt;SUB&gt;2&lt;/SUB&gt;

Ohkoshi, Tsuneo; Isoda, Yukihiro; Kaibe, H.T.; Ichida, Syunji; Masumoto, Katashi; Nishida, Isao

doi:10.2320/matertrans1960.29.756

Cited by 10 publications

(4 citation statements)

References 9 publications

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“…Several promising compounds have been investigated, among others /I-FeSi, (Isoda et al 1989), Ru,Si, (Ohta 1992), MnSi,.,, (Vedernikov et al 1988) and CrSi, (Ohkoshi et al 1988). A main question in the investigation of these compounds is how to find an optimal combination of thermopower S, resistivity p and thermal conductivity ri for a large thermoelectric figure of merit Z(T)=S2/(p K) at desired temperatures 7: For this purpose, in most cases, the degree and kind of doping is varied by changing preparation conditions or additional components, but also mixed crystals have been investigated.…”

Section: Introductionmentioning

confidence: 95%

Transport properties of nanodisperse Cr_xSi_1-xthin films†

Gladun

Heinrich

Schumann

et al. 1994

International Journal of Electronics

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The electrical conductivity and thermopower of Cr,Si,_, thin films with 0.1 < x 10.3 have been investigated between 200 K and 800 K in dependence on annealing up to 950°C. The crystallization of the amorphous as-deposited films takes place in two stages. In the first stage CrSi, is formed, and in the second one Si, resulting in a two-component nanodisperse structure. The transport behaviour clearly reflects these crystallization stages and is discussed by percolation theory. For high T,,, the conductivity shows a percolation threshold at x = 0.12. The thermopower increases with T,,, in both crystallization stages. In the two-component films the themoelectric figure of merit is larger by a factor between 1.5 and 2 in comparison with single-phase CrSi, films.

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Section: Introductionmentioning

confidence: 95%

Transport properties of nanodisperse Cr_xSi_1-xthin films†

Gladun

Heinrich

Schumann

et al. 1994

International Journal of Electronics

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“…In brittle materials such as ceramics and TE, the maximum tensile load that can be sustained in the presence of a spherical pore with radius a as given by Equation (10). Therefore, larger pores mean lower strength for a given fracture toughness, K 1C .…”

Section: Strength and Toughnessmentioning

confidence: 99%

“…Cast materials can display residual stresses due to thermal contraction and phase transformations, originating from (i) mould constraining shrinkage during the solidification stage, (ii) thermal gradients during cooling and (iii) anisotropic thermal contraction or solid–solid phase transformation of grains in polycrystals [8]. Although powder sintering, not casting [9,10], is the most common manufacturing technique used for TE materials, residual stresses caused by phase transformations and nonuniform cooling may develop in both processes. This section presents some aspects of residual stress formation during casting, based on literature examples of various classes of materials.…”

Section: Stresses and Strains In Te Modulementioning

confidence: 99%

Mechanical behaviour of thermoelectric materials – a perspective

Malki

Snyder

Dunand

2023

International Materials Reviews

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Research on thermoelectric materialswith their vast potential for applications in solid-state cooling or energy-conversion deviceshas so far mainly focused on enhancing their conversion efficiency. However, understanding and tailoring the mechanical performance of thermoelectric modules and devices is crucial for their long-term use, as they are subjected to spatially-complex and time-varying thermomechanical stressesboth internal and externalwhich may lead to plastic, fatigue and/or creep deformation. This leads to changes in thermoelectric performance, dimensions (via strain accumulation) and mechanical integrity (via crack and pore formation, leading to failure). This review addresses the current understanding of various modes of stress-induced deformation that can take place during extended operation of thermoelectric materials and their impact on the strain (elastic, plastic, and creep), and the associated damage (bloating, fatigue, and fracture). Finally, some new areas of research straddling mechanical and thermoelectric behaviour are identified.

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“…Chromium disilicide (CrSi 2 ) has attracted much attention because it has a narrow bandgap, E g = 0.35 eV, [1] and good thermoelectric properties at high temperatures. [2] Moreover, CrSi 2 has the smallest mismatch with the silicon lattice compared to other transition metal silicides. [3] The epitaxial growth of CrSi 2 in the form of islands and thin films has already been studied on Si(111) substrates.…”

Section: Introductionmentioning

confidence: 99%