Formation and thermoelectric properties of Si/CrSi2/Si(001) heterostructures with stressed chromium disilicide nanocrystallites

Goroshko, D. L.; Chusovitin, E. A.; Bezbabniy, Dmitry; Dózsa, L.; Pécz, B.; Галкин, Н. Г.

doi:10.1007/s13391-015-4475-5

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…Furthermore, CrSi 2 is chemically and thermally stable at high temperatures. Combined with its high electrical conductivity and Seebeck coefficient, CrSi 2 becomes an engaging material for potential use in thermoelectric applications [11][12][13][14]. However, CrSi 2 has a high thermal conductivity, which negatively affects the figure of merit ZT and hinders its use as practical thermoelectric devices [11,15].…”

Section: Introductionmentioning

confidence: 99%

Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films

et al. 2022

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Section: Introductionmentioning

confidence: 99%

Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films

et al. 2022

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“…One of the effective ways to overcome these problems is to form an array of nanocrystallites (NCs) embedded inside a silicon matrix instead of forming a continuous layer on the silicon surface. We have already managed to embed NCs of semiconducting iron (-FeSi 2 ) and chromium (CrSi 2 ) disilicides inside silicon [16][17][18] without introducing a considerable amount of defects, while lattice mismatch between silicon and the NCs was 3-5%. In the present work, we have tried to apply the experience of silicide-NCs/Si heterostructure formation to GaSb/Si system.…”

Section: Introductionmentioning

confidence: 99%

Formation of Bulk and Nanocrystallite Layers of GaSb on Silicon

Goroshko¹,

Shevlyagin

Galkin

et al. 2015

SSP

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Formation of GaSb by means of solid phase epitaxy of amorphous Ga:Sb (1:1) layer on Si (001) substrate at 500 °C has been studied. At amorphous layer thickness of 16 nm, a continuous nanocrystalline layer of GaSb was formed. Decreasing of amorphous layer thickness up to 0.8 nm resulted in formation of separated GaSb nanocrystallites (NCs), which had a mean lateral size of 30–80 nm and mean height of 2–3 nm, while their concentration reached 3×109 cm-2. Atomic force microscopy and low energy electron diffraction data showed that GaSb NCs could be fully embedded into silicon lattice by deposition of 25-nm-thick silicon layer at 650 °C. Nevertheless, on a surface of the silicon layer, some holes have been formed because of NCs moving toward to the surface. The holes formation can be almost completely suppressed by deposition of additional 25-nm-thick silicon layer at 500 °C – so-called “stop-layer”.

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Effect of embedding of CrSi2 and β-FeSi2 nanocrystals into n-type conductivity silicon on the transport and thermal generation of carriers

Галкин

Dotsenko

Serhiienko

et al. 2021

Applied Surface Science

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Formation and thermoelectric properties of Si/CrSi2/Si(001) heterostructures with stressed chromium disilicide nanocrystallites

Cited by 5 publications

References 14 publications

Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films

Ion implantation effects on the microstructure, electrical resistivity and thermal conductivity of amorphous CrSi2 thin films

Formation of Bulk and Nanocrystallite Layers of GaSb on Silicon

Effect of embedding of CrSi2 and β-FeSi2 nanocrystals into n-type conductivity silicon on the transport and thermal generation of carriers

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