Abstract:Optoelectronic components such as laser diodes and light-emitting diodes are vulnerable to electrostatic discharge (ESD) and electrical overstress (EOS). In this paper, we extensively study the size effect on ESD performance of buried heterostructure (BH) distributed feedback (DFB) InGaAsP/InP lasers. We show that the ESD threshold and degradation behavior of BH lasers are correlated with the cavity length and contact width. The ESD threshold increases linearly with increasing cavity length and contact width. … Show more
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