Reliability of optoelectronics

Huang, Jia-Sheng

doi:10.1016/b978-1-78242-221-1.00006-x

Cited by 11 publications

(9 citation statements)

References 61 publications

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“…In practice, estimates based on three currents are more reliable since the confidence level is higher. However, one has to ensure that no new failure mechanism is introduced at the increased current density to avoid electrical overstress (Huang et al, 2007;Huang, 2015). The other alternative method of bias aging involves reverse voltage bias.…”

Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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Avalanche photodiodes (APDs) are important building blocks for high-sensivity, low-noise receivers deployed in the datacenter, wireless and cloud computing networks. Maintaining stable dark current is a crucial task for overall robust sysem reliability. To achieve design-in low dark current stability, good knowledge of reliability physics is indispensable. In this work, we study the physical mechanisms of 10G/25G mesa-type APD degradation. We institute a predictive reliability model to account for the degradation processes. A comprehensive comparison of APD and IC transistor is also illustrated in terms of dielectric breakdown, mobile ion migration and hot carrier injection. The model suggests that surface leakage current is the dominant factor for the mesa-type APD degradation. Based on the model, it is predicted that highly reliable 10G/25G APD can be achieved with the suppression of weak links at the surface/interface states.

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Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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“…The defect diffusion rate in the InGaAs could be enhanced by the RIE-induced plasma damage (Huang, 2015;Morello et al, 2006).The RIE damage may degrade the property of regrowth and enhance the diffusion of the surface defects. The other example for the high diffusivity is the BH structure with a thin buffer between the epitaxial quantum well region and the substrate.…”

Section: Case-b: Diffusivity Dependencementioning

confidence: 99%

“…Although a number of reliability work on experimental observations was reported (Huang, 2011;Jimenez, 2003;Fukuda, 1988;Oohashi et al, 1998), there was very few defect model available in the literature (Huang, 2015).…”

Section: Introductionmentioning

confidence: 99%

Defect Diffusion Model of InGaAs/InP Semiconductor Laser Degradation

Huang¹,

Jan²,

Ren³

et al. 2016

APR

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To enable high-performance fiber to the x (FTTx) and datacenter networks, it is important to achieve reliable and stable optical components over time. Laser diode is the essential building block of the optical components. Degradation analysis is critical for overall successful reliability design. In this paper, we study the modelling and experimental data of the InGaAs/InP laser degradation. We present a defect diffusion model that involves three propagation media (p-InGaAs contact, p-InP cladding and multi-quantum wells). We propose a simple constitutive equation based on the Gauss error function to describe the defect propagation. The physical model assumes that the p-InGaAs is the rate-limiting factor for the defect diffusion process.

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“…However, the technology design rule of nanophotonics in general is not as well defined compared to the IC counterpart. Since the device roadmap of photonics is generally not as specific as that of the ICs, the reliability studies are expected to be relatively more sporadic (Huang, 2015;Ishimura et al, 2007;Huang et al, 2018;Kim et al, 2001;Takeshita et al, 2006;Watanabe et al, 1996;Huang et al, 2017;Smith et al, 2009).…”

Section: Introductionmentioning

confidence: 99%

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

Huang¹,

Chang²,

Jan³

2019

APR

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In the present era of big data and 5G wireless, both microelectronic and photonic components are indispensable building blocks. For microelectronics, device miniaturization has been following Moore's law to attain higher speed and greater functionality. For photonics, similar device scaling is also evolving in both lasers and photodiodes to transmit high data rates of 25 Gb/s and beyond. However, such device miniaturization may impose challenges such as reliability and fabrication that require careful scientific and engineering studies. In particular, the reliability understanding of photonic device scaling is fairly rudimentary with only scattered reports. In this paper, we study the device and reliability scaling of nanoscale avalanche photodiodes (APDs). The device miniaturization of APDs mainly involves thickness reduction in the charge control and multiplication layers. The layer reduction however causes an increase in breakdown field that may adversely affect reliability in several aspects such as electrical/optical overload and electrostatic discharge (ESD). We present a new reliability degradation model of APDs based on the breakdown field and correlate it with the experimental data. Empirical reliability equations are instituted to establish quantitative formulation. We discuss the overload and ESD performances as a function of breakdown field for both planar-type and mesa-type APD structures.

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Reliability of optoelectronics

Cited by 11 publications

References 61 publications

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Defect Diffusion Model of InGaAs/InP Semiconductor Laser Degradation

Reliability Scaling of Nanoscale Avalanche Photodiodes in High-Speed Optical Communication

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