SiOxNy:B layers for ex-situ doping of hole-selective poly silicon contacts: A passivation study

Morisset, Audrey; Cabal, R.; Giglia, Valentin; Grange, Bernadette; Alvarez, José; Gueunier‐Farret, Marie‐Estelle; Dubois, Sébastien; Kleider, Jean‐Paul

doi:10.1063/1.5123839

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“…In a previous study, we reported on an original ex-situ doping process of the poly-Si/SiOx contacts [18]. This process relies on the deposition of an intrinsic Si layer by PECVD, which is ex-situ doped through the deposition of a B-rich dielectric layer followed by an annealing step at high temperature (700-850 °C).…”

Section: Introductionmentioning

confidence: 99%

Evolution of the surface passivation mechanism during the fabrication of ex-situ doped poly-Si(B)/SiOx passivating contacts for high-efficiency c-Si solar cells

Morisset

Cabal

Giglia

et al. 2021

Solar Energy Materials and Solar Cells

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Passivating the contacts of crystalline silicon (c-Si) solar cells (SC) with a poly-crystalline silicon (poly-Si) layer on top of a thin silicon oxide (SiOx) is currently sparking interest for reducing carrier recombination at the interface between the metal electrode and the c-Si substrate. However, due to the interrelation between different mechanisms at play, a comprehensive understanding of the surface passivation provided by the poly-Si/SiOx contact in the final SC has not been achieved yet. In the present work, we report on an original ex-situ doping process of the poly-Si layer through the deposition of a B-rich dielectric layer followed by an annealing step to diffuse B dopants in the layer. We propose an in-depth investigation of the passivation scheme of the resulting B-doped poly-Si/SiOx contact by first comparing the surface passivation provided by ex-situ doped and intrinsic poly-Si/SiOx contacts at different steps of the fabrication process. The excellent surface passivation properties obtained with the ex-situ doped poly-Si(B) contact (iVoc = 733 mV and J0 = 6.1 fA cm -2 ) attests to the good quality of this contact. We then propose further STEM, ECV and ToF-SIMS characterizations to assess: i) the evolution of the microstructure and

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Section: Introductionmentioning

confidence: 99%